Influence of In Doping on the Electronic Transport Properties of n-Type Cu0.008Bi2Te2.7Se0.3
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Doping is an effective approach to enhance the thermoelectric figure of merit (zT) of thermoelectric alloys by modifying their electronic structure. In this study, we investigated the influence of In doping on the electronic and thermal transport properties of n-type Cu0008Bi2-xInxTe2.7Se0.3 (x = 0, 0.005, 0.01, and 0.015) polycrystalline alloys. The electrical conductivity of the alloys showed a moderate decreased by In doping. The Seebeck coefficient also decreased slightly. The bandgap Eg of the alloys widened slightly according to the Goldsmid–Sharp Eg formula. The band parameters of the conduction and valence bands were estimated using a two-band model. In the case of the In-doped samples, the concentration and mobility of electrons decreased simultaneously, resulting in a reduction in the electrical conductivity. However, the level of bipolar conduction remained unchanged even after doping because of the compensation of Eg widening and the band parameter modification. Meanwhile, the effect of In doping on the thermal conductivity of n-type Cu0.008Bi2Te2.7Se0.3 was found to be insignificant. Consequently, the zT of the alloy increased slightly to 1.12 at x = 0.05, while it decreased at higher doping levels.
KeywordsThermoelectrics bismuth telluride single parabolic band model bipolar conduction
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This work was supported by Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-MA1701-05.
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