Journal of Electronic Materials

, Volume 47, Issue 2, pp 1330–1334 | Cite as

Preparation of Scandium-Doped, Textured, M-Type Barium Ferrite via a Wet Magnetizing Orientation Process

  • Yu Wang
  • Yingli Liu
  • Huaiwu Zhang
  • Jie Li
  • Liwen Gao
  • Daming Chen
  • Yong Chen
Article
First Online:
Received:
Accepted:
  • 53 Downloads

Abstract

In this paper, a wet magnetizing orientation process was applied to synthesize c-axis-textured, M-type barium ferrite (BaFe12O19 or BaM), which is widely used to produce hard magnetic materials. To modify the magnetic properties of the BaM ferrite and make it suitable for certain operating frequencies, Sc3+ was substituted into Fe3+ sites of the BaM crystal structure. A BaSc x Fe12−x O19 ferrite with a typical relative density of ∼ 75% was successfully obtained. We used x-ray diffraction, scanning electronic microscopy, and a vibrating sample magnetometer to obtain phase information, detail of the microstructure, and magnetic properties of the BaSc x Fe12−x O19, respectively. The composition BaSc x Fe12−x O19 (x = 0.1) featured a superior squareness ratio of ∼ 67% and a saturation magnetization (M S) of ∼ 5300 Gauss in magnetic hysteresis loop measurements. These features match well with requirements for self-biased passive devices. Moreover, the site preference of Sc3+ in the hexagonal crystal structure was investigated.

Keywords

M-type barium ferrite scandium-doped c-axis-textured self-biased 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    V.G. Harris, IEEE Trans. Magn. 48, 3 (2012).CrossRefGoogle Scholar
  2. 2.
    X.Y. Liu, J. Wang, L.M. Gan, S.C. Ng, and J. Ding, J. Magn. Magn. Mater. 184, 3 (1998).CrossRefGoogle Scholar
  3. 3.
    Z.F. Zi, Q.C. Liu, J.M. Dai, and Y.P. Sun, Solid State Commun. 152, 10 (2012).CrossRefGoogle Scholar
  4. 4.
    Y.J. Chen, M.J. Nedoroscik, A.L. Geiler, C. Vittoria, and V.G. Harris, J. Am. Ceram. Soc. 91, 9 (2008).Google Scholar
  5. 5.
    Y.J. Chen, T. Sakai, T.Y. Chen, S.D. Yoon, C. Vittoria, and V.G. Harris, J. Appl. Phys. 100, 043907 (2006).CrossRefGoogle Scholar
  6. 6.
    Y.J. Chen, T. Sakai, T.Y. Chen, S.D. Yoon, C. Vittoria, and V.G. Harris, Appl. Phys. Lett. 88, 062516 (2006).CrossRefGoogle Scholar
  7. 7.
    T. Sakai, Y.J. Chen, C.N. Chinnasamy, C. Vittoria, and V.G. Harris, IEEE Trans. Magn. 42, 10 (2006).CrossRefGoogle Scholar
  8. 8.
    F.K. Lotgering, J. Inorg. Nucl. Chem. 9, 2 (1959).CrossRefGoogle Scholar
  9. 9.
    Y.J. Chen, T. Fitchorov, J.S. Gao, A.K. Veneva, M.R. Koblischka, C. Vittoria, and V.G. Harris, Nanotechnology 20, 44 (2009).Google Scholar
  10. 10.
    A. Yang, Y.J. Chen, Z.H. Chen, C. Vittoria, and V.G. Harris, J. Appl. Phys. 103, 07E511 (2008).CrossRefGoogle Scholar
  11. 11.
    T.M. Clark, B.J. Evans, and G.K. Thompson, J. Appl. Phys. 85, 8 (1999).CrossRefGoogle Scholar

Copyright information

© The Minerals, Metals & Materials Society 2017

Authors and Affiliations

  1. 1.State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengduChina
  2. 2.State Key Laboratory of Marine Resource Utilisation in South China Sea (Hainan University)HaikouChina

Personalised recommendations