Temperature-Dependent Modeling and Crosstalk Analysis in Mixed Carbon Nanotube Bundle Interconnects
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Abstract
The temperature-dependent circuit modeling and performance analysis in terms of crosstalk in capacitively coupled mixed carbon nanotube bundle (MCB) interconnects, at the far end of the victim line, have been analyzed with four different structures of MCBs (MCB-1, MCB-2, MCB-3 and MCB-4) constituted under case 1 and case 2 at the 22-nm technology node. The impact of tunneling and intershell coupling between adjacent shells on temperature-dependent equivalent circuit parameters of a multi-walled carbon nanotube bundle are also critically analyzed and employed for different MCB structures under case 1. A similar analysis is performed for copper interconnects and comparisons are made between results obtained through these analyses over temperatures ranging from 300 K to 500 K. The simulation program with integrated circuit emphasis simulation results reveals that, compared with all MCB structures under case 1 and case 2, with rise in temperature from 300 K to 500 K, crosstalk-induced noise voltage levels at the far end of the victim line are found to be significantly large in copper. It is also observed that due to the dominance of larger temperature-dependent resistance and ground capacitance in case 1, the MCB-2 is of lower crosstalk-induced noise voltage levels than other structures of MCBs. On the other hand, the MCB-1 has smaller time duration of victim output. Results further reveal that, compared with case 2 of MCB, with rise in temperatures, the victim line gets less prone to crosstalk-induced noise in MCB interconnects constituted under case 1, due to tunneling effects and intershell coupling between adjacent shells. Based on these comparative results, a promising MCB structure (MCB-2) has been proposed among other structures under the consideration of tunneling effects and intershell coupling (case 1).
Keywords
Carbon nanotube (CNT) single-walled carbon nanotube (SWCNT) multi-walled carbon nanotube (MWCNT) very large scale integration (VLSI) mixed carbon nanotube bundle (MCB)Preview
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References
- 1.B.Q. Wei, R. Vajtai, and P.M. Ajayan, Appl. Phys. 79, 1172 (2001).Google Scholar
- 2.F. Kreupl, A.P. Graham, M. Liebau, G.S. Duesbarg, R. Seidal, and E. Unger, in IEDM Technical Digest. IEEE International Electron Devices Meeting 2004, pp. 683–686 (2004)Google Scholar
- 3.P.L. McEuen, M.S. Fuhrer, and H. Park, IEEE Trans. Nanotechnol. 1, 78 (2002).CrossRefGoogle Scholar
- 4.A. Naeemi, R. Sarvar, and J.D. Meindl, IEEE Electron Dev. Lett. 26, 84 (2005).CrossRefGoogle Scholar
- 5.H. Li and K. Banerjee, IEEE Trans. Electron. Dev. 56, 2202 (2009).CrossRefGoogle Scholar
- 6.N. Srivastava and K. Banerjee, in Proceedings of ICCAD, pp. 383–390 (2005)Google Scholar
- 7.A. Raychowdhury and K. Roy, IEEE Trans. Comput. Aided Des. Int. Circuits Syst. 25, 58 (2006).CrossRefGoogle Scholar
- 8.W. Steinhogl, et al., J. Appl. Phys. 97, 023706 (2005).CrossRefGoogle Scholar
- 9.M.K. Rai and S. Sarkar, Phys. Status Solidi A 208, 735 (2011).CrossRefGoogle Scholar
- 10.M.K. Rai and S. Sarkar, J. Comput. Electron. 12, 796 (2013).CrossRefGoogle Scholar
- 11.D. Das and H. Rahaman, IEEE Trans. Nanotechnol. 10, 1362 (2011).CrossRefGoogle Scholar
- 12.A. Javey et al., Nano Lett. 4, 447 (2004).CrossRefGoogle Scholar
- 13.S. Haruehanroengra and W. Wang, IEEE Trans. Electron Dev. Lett. 28, 756 (2007).CrossRefGoogle Scholar
- 14.L. Zhu, Y. Xiu, D.W. Hess, and C.P. Wong, in Proceedings of Electronics Packaging Technology Conference, pp. 646–651 (2005)Google Scholar
- 15.L. Cheung, A. Kurtz, H. Park, and C.M. Lieber, J. Phys. Chem. B 106, 2429 (2002).CrossRefGoogle Scholar
- 16.J. Li, Q. Ye, A. Casssell, H.T. Ng, R. Stevens, J. Han, and M. Meyyappan, Appl. Phys. Lett. 82, 2491 (2003).CrossRefGoogle Scholar
- 17.P.U. Sathyakam and P.S. Mallick, Electron. Lett. 47, 1134 (2011)Google Scholar
- 18.P.U. Sathyakam and P.S. Mallick, Int. J. Electron. 99, 1439 (2012).CrossRefGoogle Scholar
- 19.M.K. Majumder, N.D. Pandya, B.K. Kaushik, and S.K. Manhas, IET Electron. Lett. 48, 384 (2012).CrossRefGoogle Scholar
- 20.S. Subash, J. Kolar, and M.H. Chowdhury, IEEE Trans. Nanotechnol. 12, 3 (2013).CrossRefGoogle Scholar
- 21.Semiconductor Industry Association, International Technology Roadmap for Semiconductors (ITRS), http://www. itrs.net/. Accessed 10 January 2016
- 22.S. Im, N. Srivastava, K. Banerjee, and K.E. Goodson, IEEE Trans. Electron Dev. 52, 2710 (2005).CrossRefGoogle Scholar
- 23.E. Pop, D. Mann, J. Reifenberg, K. Goodson, and H. Dai, IEEE Int. Electr. Devices Meeting (IEDM), pp. 253–256 (2005)Google Scholar
- 24.E. Pop, D.A. Mann, K.E. Goodson, and H. Dai, Appl. Phys. 101, 093710 (2007).CrossRefGoogle Scholar
- 25.K.M. Mohsin, A. Srivastava, and A.K. Sharma, Nanomaterials (2013). doi: 10.3390/nano3020229.Google Scholar
- 26.A. Hosseini and V. Shabro, Microelectron. Eng. 87, 1955 (2010).CrossRefGoogle Scholar
- 27.M.K. Rai and S. Sarkar, Int. J. Circuit Theory Appl. 43, 1367 (2014).CrossRefGoogle Scholar
- 28.M.K. Rai, B.K. Kaushik, and S. Sarkar, J. Comput. Electron. 15, 407 (2016).CrossRefGoogle Scholar
- 29.P.J. Burke, IEEE Trans. Nanotechnol. 1, 129 (2002).CrossRefGoogle Scholar
- 30.M.S. Sarto and A. Tamburrano, IEEE Trans. Nanotechnol. 9, 82 (2010).CrossRefGoogle Scholar
- 31.M.D. Amore, M.S. Sarto, and A. Tamburrano, IEEE Trans. Electromagn. Compat. 52, 496 (2010).CrossRefGoogle Scholar
- 32.Z. Yao, C.L. Kane, and C. Dekker, Phys. Rev. Lett. 84, 2941 (2000).CrossRefGoogle Scholar
- 33.J.Y. Park, S. Rosenblatt, Y. Yaish, V. Sozonova, H. Ustanel, S. Braig, T.A. Arias, P.W. Brouwer, and P.L. McEuen, Nano Lett. 4, 517 (2004).CrossRefGoogle Scholar
- 34.H. Li, W.-Y. Yin, K. Banerjee, and J.-F. Mao, IEEE Trans. Electron Dev. 55, 1328 (2008).CrossRefGoogle Scholar
- 35.D.C. Giancoli, in Physics for Scientists and Engineers with Modern Physics, 4th edn. Prentice Hall, New Jersey (1984)Google Scholar
- 36.S.C. Wong, G.Y. Lee, and D.J. Ma, IEEE Trans. Semicond. Manfuf. 13, 108 (2000).CrossRefGoogle Scholar
- 37.Predictive Technology Model (PTM), www.eas.asu.edu/∼ ptm/. Accessed 11 Jan 2016
- 38.S.N. Pu, W.Y. Yin, J.F. Mao, and Q.H. Liu, IEEE Trans. Electron Dev. 56, 560 (2009).CrossRefGoogle Scholar
- 39.D. Rossi, J.M. Cazeaux, C. Metra, and F. Lombardi, IEEE Trans. Nanotechnol. 6, 133 (2007).CrossRefGoogle Scholar
- 40.B.K. Kaushik and S. Sarkar, Microelectron. J. 39, 1834 (2008).CrossRefGoogle Scholar
- 41.K. Agarwal, D. Sylvester, and D. Blaauw, IEEE Trans. Comput. Aided Des. Int. Circuits Syst. 25, 892 (2006).CrossRefGoogle Scholar