Fully Printed Memristors from Cu–SiO2 Core–Shell Nanowire Composites
This article describes a fully printed memory in which a composite of Cu–SiO2 nanowires dispersed in ethylcellulose acts as a resistive switch between printed Cu and Au electrodes. A 16-cell crossbar array of these memristors was printed with an aerosol jet. The memristors exhibited moderate operating voltages (∼3 V), no degradation over 104 switching cycles, write speeds of 3 μs, and extrapolated retention times of 10 years. The low operating voltage enabled the programming of a fully printed 4-bit memristor array with an Arduino. The excellent performance of these fully printed memristors could help enable the creation of fully printed RFID tags and sensors with integrated data storage.
KeywordsMemristors printed electronics non-volatile memory copper nanowires nanowires
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|Funder Name||Grant Number||Funding Note|
|National Science Foundation|