Journal of Electronic Materials

, Volume 46, Issue 7, pp 4596–4603

Fully Printed Memristors from Cu–SiO2 Core–Shell Nanowire Composites

  • Matthew J. Catenacci
  • Patrick F. Flowers
  • Changyong Cao
  • Joseph B. Andrews
  • Aaron D. Franklin
  • Benjamin J. Wiley
Article

DOI: 10.1007/s11664-017-5445-5

Cite this article as:
Catenacci, M.J., Flowers, P.F., Cao, C. et al. Journal of Elec Materi (2017) 46: 4596. doi:10.1007/s11664-017-5445-5

Abstract

This article describes a fully printed memory in which a composite of Cu–SiO2 nanowires dispersed in ethylcellulose acts as a resistive switch between printed Cu and Au electrodes. A 16-cell crossbar array of these memristors was printed with an aerosol jet. The memristors exhibited moderate operating voltages (∼3 V), no degradation over 104 switching cycles, write speeds of 3 μs, and extrapolated retention times of 10 years. The low operating voltage enabled the programming of a fully printed 4-bit memristor array with an Arduino. The excellent performance of these fully printed memristors could help enable the creation of fully printed RFID tags and sensors with integrated data storage.

Keywords

Memristors printed electronics non-volatile memory copper nanowires nanowires 

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Supplementary material

11664_2017_5445_MOESM1_ESM.doc (404 kb)
Supplementary material 1 (DOC 404 kb)

Funding information

Funder NameGrant NumberFunding Note
National Science Foundation
  • DMR-1253534

Copyright information

© The Minerals, Metals & Materials Society 2017

Authors and Affiliations

  • Matthew J. Catenacci
    • 1
  • Patrick F. Flowers
    • 1
  • Changyong Cao
    • 2
  • Joseph B. Andrews
    • 2
  • Aaron D. Franklin
    • 1
    • 2
  • Benjamin J. Wiley
    • 1
  1. 1.Department of ChemistryDuke UniversityDurhamUSA
  2. 2.Department of Electrical and Computer EngineeringDuke UniversityDurhamUSA

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