High Temperature Electronic and Thermal Transport Properties of EuGa2−x In x Sb2
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The Zintl phase EuGa2Sb2 was synthesized via ball milling followed by hot pressing. The crystal structure of EuGa2Sb2 is comprised of a 3-D network of polyanionic [Ga2Sb2]2− tunnels filled with Eu cations that provide charge balance (Eu2+[Ga2Sb2]2−). Here we report the temperature-dependent resistivity, Hall Effect, Seebeck coefficient and thermal conductivity for EuGa2−x In x Sb2 (x = 0, 0.05, 0.1) from 300 K to 775 K. Experimental results demonstrate that the material is a p-type semiconductor. However, a small band gap (∼0.1 eV) prevents EuGa2Sb2 from having high zT at higher temperatures. Isoelectronic substitution of In on the Ga site leads to point defect scattering of holes and phonons, thus reducing thermal conductivity and resulting in a slight improvement in zT.
KeywordsEuGa2Sb2 thermoelectric zintl phase semiconductor
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This research was performed partially at the Jet Propulsion Laboratory supported by the NASA Science Missions Directorate’s Radioisotope Power System’s Thermoelectric Technology Development project under contract with the NASA. U.A. acknowledges the financial assistance provided by The Scientific and Technological Research Council of Turkey. S.C. and U.A. thank Alexandra Zevalkink for her edits and discussions, Douglas Hofmann for speed of sound measurements, Kurt Star for his input during discussions and Stephanie Reyes, Prastuti Singh, and Eugene Vinitsky for their help finding literature. A.O. thanks Ulrike Nitzsche from IFW Dresden, Germany for technical help in computational work.
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