Journal of Electronic Materials

, Volume 46, Issue 7, pp 3851–3856 | Cite as

Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices

  • V. Orsi Gordo
  • Y. Galvão Gobato
  • H. V. A. Galeti
  • M. J. S. P. Brasil
  • D. Taylor
  • M. Henini
Article
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Abstract

In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs’ PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs.

Keywords

Quantum rings photoluminescence spin polarization resonant tunneling 
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Copyright information

© The Minerals, Metals & Materials Society 2017

Authors and Affiliations

  1. 1.Departamento de FísicaUniversidade Federal de São CarlosSão CarlosBrazil
  2. 2.Departamento de Engenharia ElétricaUniversidade Federal de São CarlosSão CarlosBrazil
  3. 3.Instituto de Física “Gleb Wataghin”Universidade Estadual de Campinas-UNICAMPCampinasBrazil
  4. 4.School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience CentreUniversity of NottinghamNottinghamUK

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