Journal of Electronic Materials

, Volume 46, Issue 4, pp 2147–2152 | Cite as

Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

  • Kai-Huang Chen
  • Chien-Min Cheng
  • Ming-Cheng Kao
  • Kuan-Chang Chang
  • Ting-Chang Chang
  • Tsung-Ming Tsai
  • Sean Wu
  • Feng-Yi Su
Article
First Online:
Received:
Accepted:
  • 119 Downloads

Abstract

The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current–voltage (I–V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

Keywords

Thermal annealing process bipolar switching properties vanadium oxide thin film RRAM RTA 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Notes

Acknowledgements

The authors acknowledge financial support from the National Science Council of the Republic of China (103-2633-E-272-001).

References

  1. 1.
    C.T. Tsai, T.C. Chang, P.T. Liu, P.Y. Yang, Y.C. Kuo, K.T. Kin, P.L. Chang, and F.S. Huang, Appl. Phys. Lett. 91, 012109 (2007).CrossRefGoogle Scholar
  2. 2.
    C.T. Tsai, T.C. Chang, K.T. Kin, P.T. Liu, P.Y. Yang, C.F. Weng, and F.S. Huang, J. Appl. Phys. 103, 074108 (2008).CrossRefGoogle Scholar
  3. 3.
    M.C. Chen, T.C. Chang, S.Y. Huang, K.C. Chang, H.W. Li, S.C. Chen, J. Lu, and Y. Shi, Appl. Phys. Lett. 94, 162111 (2009).CrossRefGoogle Scholar
  4. 4.
    K.H. Chen, T.C. Chang, G.C. Chang, Y.E. Hsu, Y.C. Chen, and H.Q. Xu, Appl. Phys. A Mater. Sci. Process. 99, 291 (2010).CrossRefGoogle Scholar
  5. 5.
    P.C. Yang, T.C. Chang, S.C. Chen, Y.S. Lin, H.C. Huang, and D.S. Gan, Electrochem. Solid State Lett. 14, 93 (2011).CrossRefGoogle Scholar
  6. 6.
    Y.E. Syu, T.C. Chang, T.M. Tsai, Y.C. Hung, K.C. Chang, M.J. Tsai, M.J. Kao, and S.M. Sze, IEEE Electron Device Lett. 32, 545 (2011).CrossRefGoogle Scholar
  7. 7.
    L.W. Feng, C.Y. Chang, Y.F. Chang, W.R. Chen, S.Y. Wang, P.W. Chiang, and T.C. Chang, Appl. Phys. Lett. 96, 052111 (2010).CrossRefGoogle Scholar
  8. 8.
    L.W. Feng, C.Y. Chang, Y.F. Chang, T.C. Chang, S.Y. Wang, S.C. Chen, C.C. Lin, S.C. Chen, and P.W. Chiang, Appl. Phys. Lett. 96, 222108 (2010).CrossRefGoogle Scholar
  9. 9.
    K.H. Chen, Y.C. Chen, C.F. Yang, and T.C. Chang, J. Jpn. Appl. Phys. 46, 4197 (2007).CrossRefGoogle Scholar
  10. 10.
    F.W. Yang, K.H. Chen, C.M. Cheng, and F.Y. Su, Ceram. Int. 39, S729 (2013).CrossRefGoogle Scholar
  11. 11.
    K.C. Chang, T.M. Tsai, T.C. Chang, Y.E. Syu, and C.C. Wang, Appl. Phys. Lett. 99, 263501 (2011).CrossRefGoogle Scholar
  12. 12.
    K.C. Chang, T.M. Tsai, T.C. Chang, Y.E. Syu, K.H. Liao, S.L. Chuang, C.H. Li, D.S. Gan, and S.M. Sze, Electrochem. Solid-State Lett. 15, 3 (2012).CrossRefGoogle Scholar
  13. 13.
    T.M. Tsai, K.C. Chang, T.C. Chang, Y.E. Syu, K.H. Liao, B.H. Tseng, and S.M. Sze, Appl. Phys. Lett. 101, 112906 (2012).CrossRefGoogle Scholar
  14. 14.
    T.M. Tsai, K.C. Chang, T.C. Chang, Y.E. Syu, S.L. Chuang, G.W. Chang, G.R. Liu, M.C. Chen, H.C. Huang, S.K. Liu, Y.H. Tai, D.S. Gan, Y.L. Yang, T.F. Young, B.H. Tseng, K.H. Chen, M.J. Tsai, C. Sze, H. Sze, and S.M. Sze, IEEE Electron Device Lett. 33, 1696 (2012).Google Scholar
  15. 15.
    T.M. Tsai, K.C. Chang, T.C. Chang, G.W. Chang, Y.E. Syu, Y.T. Su, G.R. Liu, K.H. Liao, M.C. Chen, H.C. Huang, Y.H. Tai, D.S. Gan, C. Ye, H. Wang, and S.M. Sze, IEEE Electron Device Lett. 33, 1693 (2012).Google Scholar
  16. 16.
    A. Marcus, E.H. Keith, L. Michael, U.S. Patent No. 3,886,578. (1975)Google Scholar
  17. 17.
    F.W. Yang, K.H. Chen, C.M. Cheng, and F.Y. Su, Ceram. Int. 39, S729 (2013).CrossRefGoogle Scholar
  18. 18.
    K.H. Chena and C.F. Yang, Ferroelectrics 381, 1 (2009).CrossRefGoogle Scholar
  19. 19.
    K.H. Chen, Y.C. Chen, Z.S. Chen, C.F. Yang, and T.C. Chang, Appl. Phys. A, Mater. Sci. Process. 89, 533 (2007).Google Scholar
  20. 20.
    T.Y. Tseng and H. Nalwa, Handbook of Nanoceramics and Their Based Nano Devices, Vol. 175 (Los Angeles: American Scientific Publishers, 2009).Google Scholar
  21. 21.
    R. Ghosh, G.K. Paul, and D. Basak, Mater. Res. Bull. 40, 1905 (2005).CrossRefGoogle Scholar

Copyright information

© The Minerals, Metals & Materials Society 2016

Authors and Affiliations

  1. 1.Department of Electronics Engineering and Computer ScienceTung-Fang Design InstituteKaohsiungTaiwan
  2. 2.Department of Electronic EngineeringSouthern Taiwan University of Science and TechnologyTainanTaiwan
  3. 3.Department of Electronic EngineeringHsiuping University of Science and TechnologyTaichungTaiwan, ROC
  4. 4.Department of Materials and Optoelectronic ScienceNational Sun Yat-Sen UniversityKaohsiungTaiwan
  5. 5.Department of PhysicsNational Sun Yat-Sen UniversityKaohsiungTaiwan

Personalised recommendations