Silver Adhesive Layer for Enhanced Pressure-Free Bonding Using Copper Nanoparticles
Abstract
Pressure-free Cu nanoparticle bonding between two Cu plates with an Ag adhesive layer was examined. Insertion of the Ag adhesive layer considerably enhanced the bonding strength at firing temperatures between 523 K and 673 K. The bonding strength generally increased with the firing temperature. The strength enhancement of the Ag adhesive layer was observed even for a very thin (3 nm) Ag layer, and there was no obvious dependence of the thickness of the Ag layer on the bonding strength for Ag layers of thickness up to 200 nm. Ag atoms from the adhesive layer diffused away to the bonding layer with an increase in the firing temperature. The elemental mapping images showed that the Ag had two morphologies: thin Ag layers existing between particulate Cu grains, and fine Ag particles dispersed in coarse Cu crystals. The microstructure near the interface between the Cu nanoparticle bonding layer and Cu plate used as the substrate suggests that the enhancement effect of the Ag layer originates in the active migration of the Ag layer itself.
Keywords
Nanostructured materials bonding sintering interfacePreview
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References
- 1.P.G. Neudeck, R.S. Okojie, and L.Y. Chen, Proc. IEEE 90, 1065 (2002).CrossRefGoogle Scholar
- 2.H.S. Chin, K.Y. Cheong, and A.B. Ismail, Metall. Mater. Trans. B 41, 824 (2010).CrossRefGoogle Scholar
- 3.K. Suganuma, S.J. Kim, and K.S. Kim, JOM 61, 64 (2009).CrossRefGoogle Scholar
- 4.X. Chen, M. Li, X.X. Ren, A.M. Hu, and D.L. Mao, J. Electron. Mater. 35, 1734 (2006).CrossRefGoogle Scholar
- 5.J.Y. Tsai, C.W. Chang, C.E. Ho, Y.L. Lin, and C.R. Kao, J. Electron. Mater. 35, 65 (2006).CrossRefGoogle Scholar
- 6.F. Lang, H. Yamaguchi, H. Ohashi, and H. Sato, J. Electron. Mater. 40, 1563 (2011).CrossRefGoogle Scholar
- 7.N.S. Bosco and F.W. Zok, Acta Mater. 52, 2965 (2004).CrossRefGoogle Scholar
- 8.M.S. Park, S.L. Gibbons, and R. Arroyave, Acta Mater. 60, 6278 (2012).CrossRefGoogle Scholar
- 9.S.W. Yoon, M.D. Glover, and K. Shiozaki, IEEE Trans. Power Electron. 28, 2448 (2013).Google Scholar
- 10.P.O. Quintero and F.P. McCluskey, IEEE Trans. Device Mater. Reliab. 11, 531 (2011).Google Scholar
- 11.T.G. Lei, J.N. Calata, G.-Q. Lu, X. Chen, and S. Luo, IEEE Trans. Compon. Packag. Technol. 33, 98 (2010).CrossRefGoogle Scholar
- 12.K.S. Siow, J. Alloys Compd. 514, 6 (2012).CrossRefGoogle Scholar
- 13.K.S. Siow, J. Electron. Mater. 43, 947 (2014).CrossRefGoogle Scholar
- 14.T. Morita, E. Ide, Y. Yasuda, A. Hirose, and K.F. Kobayashi, Jpn. J. Appl. Phys. 47, 6615 (2008).CrossRefGoogle Scholar
- 15.E. Ide, S. Angata, A. Hirose, and K.F. Kobayashi, Acta Mater. 53, 2385 (2005).CrossRefGoogle Scholar
- 16.H. Ogura, M. Maruyama, R. Matsubayashi, T. Ogawa, S. Nakamura, T. Komatsu, H. Nagasawa, A. Ichimura, and S. Isoda, J. Electron. Mater. 39, 1233 (2010).CrossRefGoogle Scholar
- 17.Y. Kobayashi, T. Shirochi, Y. Yasuda, and T. Morita, Int. J. Adhes. Adhes. 33, 50 (2012).CrossRefGoogle Scholar
- 18.Y. Morisada, T. Nagaoka, M. Fukusumi, Y. Kashiwagi, M. Yamamoto, and M. Nakamoto, J. Electron. Mater. 39, 1283 (2010).CrossRefGoogle Scholar
- 19.T. Ishizaki and R. Watanabe, J. Mater. Chem. 22, 25198 (2012).CrossRefGoogle Scholar
- 20.T. Ishizaki, T. Satoh, A. Kuno, A. Tane, M. Yanase, F. Osawa, and Y. Yamada, Microelectron. Reliab. 53, 1543 (2013).CrossRefGoogle Scholar
- 21.T. Ishizaki, A. Kuno, T. Tane, M. Yanase, F. Osawa, T. Satoh, and Y. Yamada, Microelectron. Reliab. 54, 1867 (2014).CrossRefGoogle Scholar
- 22.T. Ishizaki, M. Usui, and Y. Yamada, Microelectron. Reliab. 55, 1861 (2015).CrossRefGoogle Scholar
- 23.T. Ishizaki, K. Akedo, T. Satoh, and R. Watanabe, J. Electron. Mater. 43, 774 (2014).CrossRefGoogle Scholar
- 24.R. Watanabe and T. Ishizaki, J. Mater. Chem. C 2, 3542 (2014).CrossRefGoogle Scholar
- 25.R. Watanabe and T. Ishizaki, Part. Part. Syst. Charact. 31, 699 (2014).CrossRefGoogle Scholar
- 26.T. Satoh and T. Ishizaki, J. Alloys Compd. 629, 118 (2015).CrossRefGoogle Scholar
- 27.T. Ishizaki and R. Watanabe, J. Electron. Mater. 43, 4413 (2014).CrossRefGoogle Scholar
- 28.C. Oh, S. Nagao, and K. Suganuma, J. Electron. Mater. 43, 4406 (2014).CrossRefGoogle Scholar
- 29.P. Peng, A. Hu, B. Zhao, A.P. Gerlich, and Y.N. Zhou, J. Mater. Sci. 47, 6801 (2012).CrossRefGoogle Scholar
- 30.Y. Morisada, T. Nagaoka, M. Fukusumi, Y. Kashiwagi, M. Yamamoto, M. Nakamoto, H. Kakiuchi, and Y. Yoshida, J. Electron. Mater. 40, 2398 (2011).CrossRefGoogle Scholar
- 31.K. Suganuma, S. Sakamoto, N. Kagami, D. Wakuda, K.S. Kim, and M. Nogi, Microelectron. Reliab. 52, 375 (2012).CrossRefGoogle Scholar
- 32.T. Satoh, K. Akedo, and T. Ishizaki, J. Alloys Compd. 582, 403 (2014).CrossRefGoogle Scholar
- 33.M. Yeadon, J.C. Young, R.S. Averback, and J.W. Bullard, Nanostruct. Mater. 10, 731 (1998).CrossRefGoogle Scholar
- 34.H. Mehrer, N. Stolica, and N.A. Stolwijk, Diffusion in Solid Metals and Alloys, Landolt-Börnstein---Group III Condensed Matter, vol. 26, ed. H. Mehrer (Springer, 1990).Google Scholar
- 35.A.D. LeClaire and G. Neumann, Diffusion in Solid Metals and Alloys, Landolt-Börnstein---Group III Condensed Matter, vol. 26, ed. H. Mehrer (Springer, 1990).Google Scholar
- 36.D.B. Butrymowicz, J.R. Manning, and M.E. Read, J. Phys. Chem. Ref. Data 3, 527 (1974).CrossRefGoogle Scholar
- 37.J.L. Murray, Metall. Trans. A 15, 261 (1984)Google Scholar
- 38.H. Bakker, Diffusion in Solid Metals and Alloys, Landolt-Börnstein---Group III Condensed Matter, vol. 26, ed. H. Mehrer (Springer, 1990).Google Scholar