Journal of Electronic Materials

, Volume 45, Issue 10, pp 5302–5312 | Cite as

Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

  • Kian Heng Goh
  • A. S. M. A. Haseeb
  • Yew Hoong Wong
Article
First Online:
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Accepted:

Abstract

Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has been carried out in oxygen ambient at various temperatures (600°C to 900°C) for 15 min and the effect of the oxidation temperature on the structural, chemical, and electrical properties of the resulting Sm2O3 layers investigated. The crystallinity of the Sm2O3 films and the existence of an interfacial layer were evaluated by x-ray diffraction (XRD) analysis, Fourier-transform infrared (FTIR) spectroscopy, and Raman analysis. The crystallite size and microstrain of Sm2O3 were estimated by Williamson–Hall (W–H) plot analysis, with comparison of the former with the crystallite size of Sm2O3 as calculated using the Scherrer equation. High-resolution transmission electron microscopy (HRTEM) with energy-dispersive x-ray (EDX) spectroscopy analysis was carried out to investigate the cross-sectional morphology and chemical distribution of selected regions. The activation energy or growth rate of each stacked layer was calculated from Arrhenius plots. The surface roughness and topography of the Sm2O3 layers were examined by atomic force microscopy (AFM) analysis. A physical model based on semipolycrystalline nature of the interfacial layer is suggested and explained. Results supporting such a model were obtained by FTIR, XRD, Raman, EDX, and HRTEM analyses. Electrical characterization revealed that oxidation temperature at 700°C yielded the highest breakdown voltage, lowest leakage current density, and highest barrier height value.

Keywords

Samarium oxide oxidation sputtering stoichiometry 
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Notes

Acknowledgements

This project is funded by University of Malaya Research Grant (UMRG) Nos. RP013D-13AET and RP024A-13AET, Fundamental Research Grant Scheme (FRGS) Grant No. FP010-2013B, and Postgraduate Research Grant (PPP) No. PG048-2014A. The authors would also like to acknowledge the Faculty of Engineering and Faculty of Science, University of Malaya for providing the facilities and resources necessary for this research.

Authors’ contributions

K.H.G. was involved in experimental design, data acquisition, data interpretation and analysis, and drafting and revision of the manuscript. Y.H.W. and A.S.M.A.H. were involved in revising the manuscript critically for important intellectual content and gave final approval for the version submitted for publication.

Conflict of interest

The authors declare that they have no competing interests.

References

  1. 1.
    J.B. Casady and R.W. Johnson, Solid-State Electron. 39, 1409 (1996).CrossRefGoogle Scholar
  2. 2.
    A. Elford and P.A. Mawby, Microelectron. J. 30, 527 (1999).CrossRefGoogle Scholar
  3. 3.
    P.R. Chalker, Thin Solid Films 343, 616 (1999).CrossRefGoogle Scholar
  4. 4.
    Y.H. Wong and K.Y. Cheong, J. Mater Sci-Mater. El. 21, 980 (2010).CrossRefGoogle Scholar
  5. 5.
    S.I. Ohmi, C. Kobayashi, K. Aizawa, S.I. Yamamoto, E. Tokumitsu, H. Ishiwara, and H. Iwai, in 31st European Solid-State Device Research Conference, ESSDERC (2001) 235.Google Scholar
  6. 6.
    H.D. Kim and Y. Roh, J. Korean Phys. Soc. 49, 755 (2006).Google Scholar
  7. 7.
    V.V. Atuchin, V.N. Kruchinin, Y.H. Wong, and K.Y. Cheong, Mater. Lett. 105, 72 (2013).CrossRefGoogle Scholar
  8. 8.
    Y.H. Wong and K.Y. Cheong, Ceram. Int. 39, 475 (2013).CrossRefGoogle Scholar
  9. 9.
    Y.H. Wong and K.Y. Cheong, Mater. Chem. Phys. 136, 624 (2012).CrossRefGoogle Scholar
  10. 10.
    Y.H. Wong and K.Y. Cheong, J. Electrochem. Soc. 159, 293 (2012).CrossRefGoogle Scholar
  11. 11.
    Y.H. Wong and K.Y. Cheong, Thin Solid Films 520, 6822 (2012).CrossRefGoogle Scholar
  12. 12.
    Y.H. Wong and K.Y. Cheong, J. Alloy. Compd. 509, 8728 (2011).CrossRefGoogle Scholar
  13. 13.
    C.C. Chew, M.S. Gorji, K.H. Goh, C.G. Tan, S. Ramesh, and Y.H. Wong, Appl. Phys. A-Mater. 122, 66 (2016).CrossRefGoogle Scholar
  14. 14.
    L. Shi, Y. Yuan, X.F. Liang, Y.D. Xia, J. Yin, and Z.G. Liu, Appl. Surf. Sci. 253, 3731 (2007).CrossRefGoogle Scholar
  15. 15.
    J. Paivasaari, M. Putkonen, and L. Niinisto, Thin Solid Films 472, 275 (2005).CrossRefGoogle Scholar
  16. 16.
    S.J. Jo, J.S. Ha, N.K. Park, D.K. Kang, and B.H. Kim, Thin Solid Films 513, 253 (2006).CrossRefGoogle Scholar
  17. 17.
    G.D. Wilk, R.M. Wallace, and J.M. Anthony, J. Appl. Phys. 89, 5243 (2001).CrossRefGoogle Scholar
  18. 18.
    M. Houssa, L. Pantisano, L.A. Ragnarsson, R. Degraeve, T. Schram, G. Pourtois, S. De Gendt, G. Groeseneken, and M.M. Heyns, Mater. Sci. Eng. R 51, 37 (2006).CrossRefGoogle Scholar
  19. 19.
    T.M. Pan, W.T. Chang, and F.C. Chiu, Appl. Surf. Sci. 257, 3964 (2011).CrossRefGoogle Scholar
  20. 20.
    W.C. Chin, K.Y. Cheong, and Z. Hassan, Mater. Sci. Semicond. Proc. 13, 303 (2010).CrossRefGoogle Scholar
  21. 21.
    K.H. Goh, A.S.M.A. Haseeb, and Y.H. Wong, Thin Solid Films 606, 80 (2016).CrossRefGoogle Scholar
  22. 22.
    T.M. Pan and C.C. Huang, Appl. Surf. Sci. 256, 7186 (2010).CrossRefGoogle Scholar
  23. 23.
    F.H. Chen, M.N. Hung, J.F. Yang, S.Y. Kuo, J.L. Her, Y.H. Matsuda, and T.M. Pan, J Phys. Chem. Solids 74, 570 (2013).CrossRefGoogle Scholar
  24. 24.
    C.H. Kao, H. Chen, K.S. Chen, C.Y. Huang, C.H. Huang, J.C. Ou, C.J. Lin, K.M. Lin, L.T. Kuo, in 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Proceedings (2010) p. 1425.Google Scholar
  25. 25.
    X.Y. Zhao, X.L. Wang, H. Lin, and Z.Q. Wang, Phys. B 403, 1787 (2008).CrossRefGoogle Scholar
  26. 26.
    K. Shalini and S.A. Shivashankar, Bull. Mater. Sci. 28, 49 (2005).CrossRefGoogle Scholar
  27. 27.
    C. Constantinescu, V. Ion, A.C. Galca, and M. Dinescu, Thin Solid Films 520, 6393 (2012).CrossRefGoogle Scholar
  28. 28.
    A.A. Dakhel, J. Alloy. Compd. 365, 233 (2004).CrossRefGoogle Scholar
  29. 29.
    V.A. Rozhkov, A.Y. Trusova, and I.G. Berezhnoy, Thin Solid Films 325, 151 (1998).CrossRefGoogle Scholar
  30. 30.
    V.A. Rozhkov, V.P. Goncharov, A.Y. Trusova, in Proceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics (1995) p. 552.Google Scholar
  31. 31.
    S.Y. Huang, T.C. Chang, M.C. Chen, S.C. Chen, H.P. Lo, H.C. Huang, D.S. Gan, S.M. Sze, and M.J. Tsai, Solid-State Electron. 63, 189 (2011).CrossRefGoogle Scholar
  32. 32.
    S. Kaya, E. Yilmaz, A. Kahraman, and H. Karacali, Nucl. Instrum. Meth. B 358, 188 (2015).CrossRefGoogle Scholar
  33. 33.
    A.A. Dakhel, J. Alloy. Compd. 422, 1 (2006).CrossRefGoogle Scholar
  34. 34.
    X.H. Cheng, D.P. Xu, Z.R. Song, D.W. He, Y.H. Yu, Q.T. Zhao, and D.S. Shen, Appl. Surf. Sci. 256, 921 (2009).CrossRefGoogle Scholar
  35. 35.
    Y.P. Wu, S.F. Zhu, T.W. Liu, F.F. Li, Y.Z. Zhang, Y.C. Rao, and Y.B. Zhang, Appl. Surf. Sci. 307, 615 (2014).CrossRefGoogle Scholar
  36. 36.
    M.A. Pampillon, P.C. Feijoo, E.S. Andres, M.L. Lucia, A. del Prado, and M. Toledano-Luque, Microelectron. Eng. 88, 2991 (2011).CrossRefGoogle Scholar
  37. 37.
    K. Venkateswarlu, A.C. Bose, and N. Rameshbabu, Phys. B 405, 4256 (2010).CrossRefGoogle Scholar
  38. 38.
    K. Santra, P. Chatterjee, and S.P. Sen Gupta. Bull. Mater. Sci. 25, 251 (2002).CrossRefGoogle Scholar
  39. 39.
    S. Vives, E. Gaffet, and C. Meunier, Mater. Sci. Eng. A-Str. 366, 229 (2004).CrossRefGoogle Scholar
  40. 40.
    V.D. Mote, Y. Purushotham, and B.N. Dole, Cryst. Res. Technol. 46, 705 (2011).CrossRefGoogle Scholar
  41. 41.
    E.J. Mittemeijer and U. Welzel, Z. Kristallogr. 223, 552 (2008).CrossRefGoogle Scholar
  42. 42.
    M. Herrmann, U. Forter-Barth, P.B. Kempa, and H. Krober, Chem. Eng. Technol. 32, 1067 (2009).CrossRefGoogle Scholar
  43. 43.
    A.K. Zak, W.H.A. Majid, M.E. Abrishami, and R. Yousefi, Solid State Sci. 13, 251 (2011).CrossRefGoogle Scholar
  44. 44.
    S. Miyazaki, Appl. Surf. Sci. 190, 66 (2002).CrossRefGoogle Scholar
  45. 45.
    G.A.M. Hussein, D.J. Buttrey, P. DeSanto, A.A. Abd-Elgaber, H. Roshdy, and A.Y.Z. Myhoub, Thermochim. Acta 402, 27 (2003).CrossRefGoogle Scholar
  46. 46.
    M.A. Ruiz-Gomez, C. Gomez-Solis, M.E. Zarazua-Morin, L.M. Tones-Martinez, I. Juarez-Ramirez, D. Sanchez-Martinez, and M.Z. Figueroa-Torres, Ceram. Int. 40, 1893 (2014).CrossRefGoogle Scholar
  47. 47.
    H.M. Ismail, Colloids Surfaces A 97, 247 (1995).CrossRefGoogle Scholar
  48. 48.
    E. Kusrini, R. Arbianti, N. Sofyan, M.A.A. Abdullah, and F. Andriani, Spectrochim. Acta A 120, 77 (2014).CrossRefGoogle Scholar
  49. 49.
    S. Jiang, J. Liu, C.L. Lin, X.D. Li, and Y.C. Li, J. Appl. Phys. 113, 113502 (2013).CrossRefGoogle Scholar
  50. 50.
    J. Mandal, B.J. Sarkar, A.K. Deb, and P.K. Chakrabarti, J. Magn. Magn. Mater. 371, 35 (2014).CrossRefGoogle Scholar
  51. 51.
    T. Hongo, K.I. Kondo, K.G. Nakamura, and T. Atou, J. Mater. Sci. 42, 2582 (2007).CrossRefGoogle Scholar
  52. 52.
    X.Y. Zhao, X.L. Wang, H. Lin, and Z.Q. Wang, Mater. Sci. Semicond. Proc. 33, 42 (2015).CrossRefGoogle Scholar

Copyright information

© The Minerals, Metals & Materials Society 2016

Authors and Affiliations

  • Kian Heng Goh
    • 1
  • A. S. M. A. Haseeb
    • 1
  • Yew Hoong Wong
    • 1
  1. 1.Department of Mechanical Engineering, Faculty of EngineeringUniversity of MalayaKuala LumpurMalaysia

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