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Journal of Electronic Materials

, Volume 45, Issue 11, pp 5626–5629 | Cite as

Hydrogenation Defect Passivation for Improved Minority Carrier Lifetime in Midwavelength Ga-Free InAs/InAsSb Superlattices

  • K. Hossain
  • L. Höglund
  • L. C. Phinney
  • T. D. Golding
  • G. Wicks
  • A. Khoshakhlagh
  • D. Z.-Y. Ting
  • A. Soibel
  • S. D. Gunapala
Article

Abstract

Two hydrogenation techniques were used to passivate defects in InAs/InAsSb superlattices: UV-photon assisted hydrogenation with and without DC bias enhancement. The effects of the hydrogenation on the minority carrier lifetime were studied using photoluminescence and optical modulation response. An increase of the minority carrier lifetime from 1.8 μs to 3.3 μs with hydrogenation using both methods was observed; however, the processing time shortened from 24 h to 90 min when using the DC bias enhancement. The largest increase in carrier lifetime corresponded to a deuterium density of 9 × 1014 atoms/cm2, as measured by nuclear reaction analysis.

Keywords

Hydrogenation strain layer superlattice type-II SLS carrier lifetime defect passivation Ga-free InAs InAsSb 

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Copyright information

© The Minerals, Metals & Materials Society 2016

Authors and Affiliations

  • K. Hossain
    • 1
  • L. Höglund
    • 2
  • L. C. Phinney
    • 1
  • T. D. Golding
    • 1
  • G. Wicks
    • 1
  • A. Khoshakhlagh
    • 2
  • D. Z.-Y. Ting
    • 2
  • A. Soibel
    • 2
  • S. D. Gunapala
    • 2
  1. 1.Amethyst Research Inc.ArdmoreUSA
  2. 2.Center for Infrared Photodetectors, Jet Propulsion LaboratoryCalifornia Institute of TechnologyPasadenaUSA

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