Journal of Electronic Materials

, Volume 45, Issue 4, pp 2013–2018 | Cite as

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

  • Ye Jia
  • Joshua S. Wallace
  • Yueling Qin
  • Joseph A. GardellaJr.
  • Amir M. Dabiran
  • Uttam Singisetti


In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.


m-Plane indium nitride band offset x-ray photoelectron spectroscopy 


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Copyright information

© The Minerals, Metals & Materials Society 2015

Authors and Affiliations

  • Ye Jia
    • 1
  • Joshua S. Wallace
    • 2
  • Yueling Qin
    • 3
  • Joseph A. GardellaJr.
    • 2
  • Amir M. Dabiran
    • 4
  • Uttam Singisetti
    • 1
  1. 1.Electrical Engineering DepartmentUniversity at BuffaloBuffaloUSA
  2. 2.Chemistry DepartmentUniversity at BuffaloBuffaloUSA
  3. 3.Integrated Nanostructured Systems InitiativeUniversity at BuffaloBuffaloUSA
  4. 4.SVT AssociatesEden PrairieUSA

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