Molybdenum Oxides Deposited by Modulated Pulse Power Magnetron Sputtering: Stoichiometry as a Function of Process Parameters
- 180 Downloads
- 2 Citations
Abstract
Molybdenum oxide films were deposited using modulated pulse power magnetron sputtering (MPPMS) from a molybdenum target in a reactive environment where the flow rate of oxygen was varied from 0 sccm to 2.00 sccm. By varying the amount of reactive oxygen available during deposition, the composition of the films ranged from metallic Mo to fully stoichiometric MoO3, when the molybdenum target became poisoned, due to the formation of a dielectric surface oxide coating. Film compositions were verified using high energy resolution x-ray photoelectron spectroscopy. Target poisoning occurred at an oxygen flow rate of 1.25 sccm and reversed when the flow rate decreased to about 1.00 sccm. MoO3 films deposited via MPPMS had densities of 3.8 g cm−3, 81% of the density of crystalline α-MoO3 as determined by x-ray reflectivity (XRR). In addition, XRR and atomic force microscopy data showed sub-nanometer surface roughness values. From spectroscopic ellipsometry, the measured refractive index of the MoO3 films at 589 nm was 1.97 with extinction coefficient values <0.02 at wavelengths above the measured absorption edge of 506 nm (2.45 eV).
Keywords
Molybdenum oxide reactive magnetron sputtering MPPMS XPS MoO3Preview
Unable to display preview. Download preview PDF.
References
- 1.R. Sundararaman and C. Song, Ind. Eng. Chem. Res. 53, 1890 (2014).CrossRefGoogle Scholar
- 2.J.G. Choi and L. Thompson, Appl. Surf. Sci. 93, 143 (1996).CrossRefGoogle Scholar
- 3.I.E. Wachs, Catal. Today 27, 437 (1996).CrossRefGoogle Scholar
- 4.D.S. Kim, I.E. Wachs, and K. Segawa, J. Catal. 149, 268 (1994).CrossRefGoogle Scholar
- 5.T. He and J. Yao, J. Photochem. Photobiol. C 4, 125 (2003).CrossRefGoogle Scholar
- 6.S. Kubota, K. Kanomata, K. Momiyama, T. Suzuki, and F. Hirose, IEICE Trans. Electron. 96, 604 (2013).CrossRefGoogle Scholar
- 7.M. Zhang, Z. Chen, L. Xiao, B. Qu, and Q. Gong, J. Appl. Phys. 113, 113105 (2013).CrossRefGoogle Scholar
- 8.G. Nazri and G. Pistoia, Lithium Batteries: Science and Technology (New York: Springer, 2003), p. 92.CrossRefGoogle Scholar
- 9.S. Mohamed, O. Kappertz, J. Ngaruiya, T.L. Pedersen, R. Drese, and M. Wuttig, Thin Solid Films 429, 135 (2003).CrossRefGoogle Scholar
- 10.J. Besenhard, J. Heydecke, and H. Fritz, Solid State Ion. 6, 215 (1982).CrossRefGoogle Scholar
- 11.J. Besenhard, J. Heydecke, E. Wudy, H. Fritz, and W. Foag, Solid State Ion. 8, 61 (1983).CrossRefGoogle Scholar
- 12.X. Haitao and Z. Xiang, J. Appl. Phys. 114, 244505 (2013).CrossRefGoogle Scholar
- 13.P. Qin, G. Fang, W. Ke, F. Cheng, Q. Zheng, J. Wan, H. Lei, and X. Zhao, J. Mater. Chem. A 110, 63 (2014).Google Scholar
- 14.Y. Sun, J. Wang, B. Zhao, R. Cai, R. Ran, and Z. Shao, J. Mater. Chem. A 1, 4736 (2013).CrossRefGoogle Scholar
- 15.H. Simchi, B.E. McCandless, T. Meng, and W.N. Shafarman, J. Appl. Phys. 115, 033514 (2014).CrossRefGoogle Scholar
- 16.M. Ferroni, V. Guidi, G. Martinelli, P. Nelli, M. Sacerdoti, and G. Sberveglieri, Thin Solid Films 307, 148 (1997).CrossRefGoogle Scholar
- 17.E. Comini, L. Yubao, Y. Brando, and G. Sberveglieri, Chem. Phys. Lett. 407, 368 (2005).CrossRefGoogle Scholar
- 18.D. Mutschall, K. Holzner, and E. Obermeier, Sens. Actuators B 36, 320 (1996).CrossRefGoogle Scholar
- 19.W. Moshier, G. Davis, and G. Cote, J. Electrochem. Soc. 136, 356 (1989).CrossRefGoogle Scholar
- 20.V. Nirupama, K. Gunasekhar, B. Sreedhar, and S. Uthanna, Curr. Appl. Phys. 10, 272 (2010).CrossRefGoogle Scholar
- 21.T.S. Sian and G. Reddy, Sol. Energy Mater. Sol. Cells 82, 375 (2004).CrossRefGoogle Scholar
- 22.M. Al-Kuhaili, S. Durrani, I. Bakhtiari, and A. Al-Shukri, Opt. Commun. 283, 2857 (2010).CrossRefGoogle Scholar
- 23.F. Werfel and E. Minni, J. Phys. C 16, 6091 (2000).CrossRefGoogle Scholar
- 24.D.O. Scanlon, G.W. Watson, D. Payne, G. Atkinson, R. Egdell, and D. Law, J. Phys. Chem. C 114, 4636 (2010).CrossRefGoogle Scholar
- 25.O. Marin-Flores, L. Scudiero, and S. Ha, Surf. Sci. 603, 2327 (2009).CrossRefGoogle Scholar
- 26.J. Horkans and M. Shafer, J. Electrochem. Soc. 124, 1202 (1977).CrossRefGoogle Scholar
- 27.Y. Shi, B. Guo, S.A. Corr, Q. Shi, Y. Hu, K.R. Heier, L. Chen, R. Seshadri, and G.D. Stucky, Nano Lett. 9, 4215 (2009).CrossRefGoogle Scholar
- 28.Y. Sun, X. Hu, C.Y. Jimmy, Q. Li, W. Luo, L. Yuan, W. Zhang, and Y. Huang, Energy Environ. Sci. 4, 2870 (2011).CrossRefGoogle Scholar
- 29.Y. Sun, X. Hu, W. Luo, and Y. Huang, ACS Nano 5, 7100 (2011).CrossRefGoogle Scholar
- 30.Y. Xu, R. Yi, B. Yuan, X. Wu, M. Dunwell, Q. Lin, L. Fei, S. Deng, P. Andersen, and D. Wang, J. Phys. Chem. Lett. 3, 309 (2012).CrossRefGoogle Scholar
- 31.H. Zhang, K. Wang, X. Wu, Y. Jiang, Y. Zhai, C. Wang, X. Wei, and J. Chen, Adv. Funct. Mater. 11, 1328 (2014).Google Scholar
- 32.H. Martínez, J. Torres, M. Rodríguez-García, and L.L. Carreño, Physica B 407, 3199 (2012).CrossRefGoogle Scholar
- 33.H. Martínez, J. Torres, L. López-Carreño, and M. Rodríguez-García, J. Supercond. Nov. Magn. 26, 2485 (2013).CrossRefGoogle Scholar
- 34.A. Bouzidi, N. Benramdane, H. Tabet-Derraz, C. Mathieu, B. Khelifa, and R. Desfeux, Mater. Sci. Eng. B 97, 5 (2003).CrossRefGoogle Scholar
- 35.S. Chuang, C. Battaglia, A. Azcatl, S. McDonnell, J.S. Kang, X. Yin, M. Tosun, R. Kapadia, H. Fang, and R.M. Wallace, Nano Lett. 14, 1337 (2014).CrossRefGoogle Scholar
- 36.C. Battaglia, X. Yin, M. Zheng, I.D. Sharp, T.L. Chen, A. Azcatl, S. McDonell, C. Carraro, R. Maboudian, and R.M. Wallace, Nano Lett. 14, 967 (2014).CrossRefGoogle Scholar
- 37.C. Ramana, V. Atuchin, L. Pokrovsky, U. Becker, and C. Julien, J. Vac. Sci. Technol. A 25, 1166 (2007).CrossRefGoogle Scholar
- 38.C. Ramana and C. Julien, Chem. Phys. Lett. 428, 114 (2006).CrossRefGoogle Scholar
- 39.S. Sunu, E. Prabhu, V. Jayaraman, K. Gnanasekar, and T. Gnanasekaran, Sens. Actuators B 94, 189 (2003).CrossRefGoogle Scholar
- 40.N. Miyata and S. Akiyoshi, J. Appl. Phys. 58, 1651 (1985).CrossRefGoogle Scholar
- 41.M. Rouhani, Y.L. Foo, J. Hobley, J. Pan, G.S. Subramanian, X. Yu, A. Rusydi, and S. Gorelik, Appl. Surf. Sci. 273, 150 (2013).CrossRefGoogle Scholar
- 42.J.-. Faou, E. Barthel, and S.Y. Grachev, Thin Solid Films 527, 222 (2013).CrossRefGoogle Scholar
- 43.V. Nirupama and S. Uthanna, J. Mater. Sci. 21, 45 (2010).Google Scholar
- 44.J. Lin, W.D. Sproul, J.J. Moore, S. Lee, and S. Myers, Surf. Coat. Technol. 205, 3226 (2011).CrossRefGoogle Scholar
- 45.L. Meng, T. Cho, S. Jung, and D. Ruzic, IEEE ICOPS 1, 1 (2011).Google Scholar
- 46.M. Hála, J. Čapek, O. Zabeida, J. Klemberg-Sapieha, and L. Martinu, J. Phys. D 45, 055204 (2012).CrossRefGoogle Scholar
- 47.J. Lin, W.D. Sproul, J.J. Moore, Z. Wu, S. Lee, R. Chistyakov, and B. Abraham, JOM 63, 48 (2011).CrossRefGoogle Scholar
- 48.J. Lin, J.J. Moore, W.D. Sproul, S.L. Lee, and J. Wang, IEEE Trans. Plasma Sci. 38, 3071 (2010).CrossRefGoogle Scholar
- 49.J. Lin, J. Moore, W. Sproul, B. Mishra, J. Rees, Z. Wu, R. Chistyakov, and B. Abraham, Surf. Coat. Technol. 203, 3676 (2009).CrossRefGoogle Scholar
- 50.B. Liebig, N.S.J. Braithwaite, P. Kelly, R. Chistyakov, B. Abraham, and J. Bradley, Surf. Coat. Technol. 205, S312 (2011).CrossRefGoogle Scholar
- 51.K. Sarakinos, J. Alami, and M. Wuttig, J. Phys. D 40, 2108 (2007).CrossRefGoogle Scholar
- 52.S. Konstantinidis, J. Dauchot, and M. Hecq, Thin Solid Films 515, 1182 (2006).CrossRefGoogle Scholar
- 53.V. Kouznetsov, K. Macák, J.M. Schneider, U. Helmersson, and I. Petrov, Surf. Coat. Technol. 122, 290 (1999).CrossRefGoogle Scholar
- 54.D. Depla and R. De Gryse, Surf. Coat. Technol. 183, 184 (2004).CrossRefGoogle Scholar
- 55.D. Guttler, B. Abendroth, R. Grotzschel, W. Moller, and D. Depla, Appl. Phys. Lett. 85, 6134 (2004).CrossRefGoogle Scholar
- 56.T. Lange, W. Njoroge, H. Weis, M. Beckers, and M. Wuttig, Thin Solid Films 365, 82 (2000).CrossRefGoogle Scholar
- 57.D. Depla and R. De Gryse, Surf. Coat. Technol. 183, 184 (2004).CrossRefGoogle Scholar
- 58.W.D. Sproul, J. Lin, and J.J. Moore, SVC Spring Bulletin 28, 1 (2009).Google Scholar
- 59.S. Berg and T. Nyberg, Thin Solid Films 476, 215 (2005).CrossRefGoogle Scholar
- 60.J. Lin, J.J. Moore, W.D. Sproul, B. Mishra, Z. Wu, and J. Wang, Surf. Coat. Technol. 204, 2230 (2010).CrossRefGoogle Scholar
- 61.D. Depla and R. De Gryse, Surf. Coat. Technol. 183, 190 (2004).CrossRefGoogle Scholar
- 62.D. Depla, S. Heirwegh, S. Mahieu, J. Haemers, and R. De Gryse, J. Appl. Phys. 101, 013301 (2007).CrossRefGoogle Scholar
- 63.N. Fairley, Casa Software Ltd CasaXPS 2.3.16 (1999–2011).Google Scholar
- 64.S. Dushman, Rev. Sci. Instrum. 20, 139 (1949).CrossRefGoogle Scholar
- 65.A. Phelps and Z.L. Petrovic, Plasma Sources Sci. Technol. 8, R21 (1999).CrossRefGoogle Scholar
- 66.J. Alami, P. Persson, D. Music, J. Gudmundsson, J. Bohlmark, and U. Helmersson, J. Vac. Sci. Technol. A 23, 278 (2005).CrossRefGoogle Scholar
- 67.W.D. Sproul, D.J. Christie, and D.C. Carter, Thin Solid Films 491, 1 (2005).CrossRefGoogle Scholar
- 68.V. Nirupama, M.C. Sekhar, T. Subramanyam, and S. Uthanna, J. Phys. 208, 012101 (2010).Google Scholar
- 69.J.F. Moulder, J. Chastain, and R.C. King, Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data (Eden Prairie, MN: Physical Electronics, 1995), p. 65.Google Scholar
- 70.C.R. Clayton and Y.C. Lu, Surf. Interface Anal. 14, 66 (1989).CrossRefGoogle Scholar
- 71.C.V. Ramana, V.V. Atuchin, V. Kesler, V. Kochubey, L. Pokrovsky, V. Shutthanandan, U. Becker, and R.C. Ewing, Appl. Surf. Sci. 253, 5368 (2007).CrossRefGoogle Scholar
- 72.Y.C. Liu, J.H. Hsieh, and S.K. Tung, Thin Solid Films 510, 32 (2006).CrossRefGoogle Scholar
- 73.J.I. Pankove, Absorption (New York: Dover Publications, 1971), p. 34.Google Scholar
- 74.C.G. Granqvist, Handbook of Inorganic Electrochromic Materials (New York: Elsevier Science, 1995), p. 217.Google Scholar
- 75.B.W. Faughnan and R.S. Crandall, Appl. Phys. Lett. 31, 834 (1977).CrossRefGoogle Scholar
- 76.M.A.P.B. Barna, Thin Solid Films 317, 27 (1998).CrossRefGoogle Scholar
- 77.I. Petrov, P. Barna, L. Hultman, and J. Greene, J. Vac. Sci. Technol. A 21, S117 (2003).CrossRefGoogle Scholar