Journal of Electronic Materials

, Volume 44, Issue 6, pp 1846–1850 | Cite as

Low-Temperature Transport Coefficients of Nanostructured Bi0.4Sb1.6Te3-Based Thermoelectric Materials Obtained by Spark Plasma Sintering

  • L. P. BulatEmail author
  • I. A. Drabkin
  • V. B. Osvenskii
  • Yu. N. Parkhomenko
  • D. A. Pshenay-Severin
  • A. I. Sorokin
  • A. A. Igonina
  • V. T. Bublik
  • M. G. Lavrentev


The temperature dependences of the electrical conductivity and Hall coefficient of spark-plasma-sintered nanostructured thermoelectric materials based on p-Bi0.4Sb1.6Te3 solid solution were measured in the range of 15 K to 300 K for a set of samples sintered at different temperatures from 300°C to 550°C. These data allow estimation of the mean free path of holes. Analysis of the transport coefficients together with information on the size and internal structure of the nanocrystalline grains indicates the important role of point defects in hole scattering, being more intensive for samples obtained at lower sintering temperature. The possible nature of the defects is discussed based on the transport and structural data.


Nanostructured thermoelectrics thermoelectric efficiency bismuth telluride grain boundary scattering point defect scattering 


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Copyright information

© The Minerals, Metals & Materials Society 2014

Authors and Affiliations

  • L. P. Bulat
    • 1
    Email author
  • I. A. Drabkin
    • 2
  • V. B. Osvenskii
    • 2
  • Yu. N. Parkhomenko
    • 2
  • D. A. Pshenay-Severin
    • 3
  • A. I. Sorokin
    • 2
  • A. A. Igonina
    • 2
  • V. T. Bublik
    • 4
  • M. G. Lavrentev
    • 2
  1. 1.ITMO UniversitySt. PetersburgRussian Federation
  2. 2.GIREDMET Ltd.MoscowRussian Federation
  3. 3.Ioffe Physical Technical Institute, Russian Academy of SciencesSt. PetersburgRussian Federation
  4. 4.National University of Science and Technology “MISIS”MoscowRussian Federation

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