Low-Temperature Transport Coefficients of Nanostructured Bi0.4Sb1.6Te3-Based Thermoelectric Materials Obtained by Spark Plasma Sintering
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The temperature dependences of the electrical conductivity and Hall coefficient of spark-plasma-sintered nanostructured thermoelectric materials based on p-Bi0.4Sb1.6Te3 solid solution were measured in the range of 15 K to 300 K for a set of samples sintered at different temperatures from 300°C to 550°C. These data allow estimation of the mean free path of holes. Analysis of the transport coefficients together with information on the size and internal structure of the nanocrystalline grains indicates the important role of point defects in hole scattering, being more intensive for samples obtained at lower sintering temperature. The possible nature of the defects is discussed based on the transport and structural data.
KeywordsNanostructured thermoelectrics thermoelectric efficiency bismuth telluride grain boundary scattering point defect scattering
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- 2.L. Bulat, V. Osvensky, I. Drabkin, et al. Proceedings of the 6th European Conference on Thermoelectrics, I2-1 (2008).Google Scholar
- 4.L. Bulat, V. Bublik, and I. Drabkin, et al., J. Thermoelectr. 3, 67 (2009).Google Scholar
- 12.B.M. Goltsman, B.A. Kudinov, and I.A. Smirnov, Thermoelectric Semiconductor Materials Based on Bi 2 Te 3. Moskow, Nauka, 1972, 320 p. [Translation available: Army Foreign Science and Technology Center, Charlottesville, Virginia, US, 1973].Google Scholar
- 13.V.T. Bublik, I.A. Drabkin, and V.V. Karataev, et al., Mater. Electron. Tech. 3, 10 (2012).Google Scholar