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Journal of Electronic Materials

, Volume 44, Issue 5, pp 1281–1286 | Cite as

Defect-Related Luminescence in Undoped GaN Grown by HVPE

  • M.A. Reshchikov
  • A. Usikov
  • H. Helava
  • Yu. Makarov
Article

Hydride vapor phase epitaxy (HVPE) is used for the growth of low-defect GaN. We have grown undoped films on sapphire and investigated them using steady-state and time-resolved photoluminescence (PL). One of the dominant PL bands in high-quality GaN grown by HVPE is the green luminescence (GL) band with a maximum at 2.4 eV. This PL band can be easily recognized in time-resolved PL measurements due to its exponential decay even at low temperatures (<50 K), with a characteristic lifetime of 1–2 μs. As the temperature increases from 70 K to 280 K, the PL lifetime for the GL band increases by an order of magnitude. This unusual phenomenon can be explained on the assumption that the electron-capture coefficient for the GL-related defect decreases with temperature as T −2.6.

Keywords

GaN HVPE photoluminescence defects 

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Copyright information

© The Minerals, Metals & Materials Society 2014

Authors and Affiliations

  • M.A. Reshchikov
    • 1
  • A. Usikov
    • 2
    • 3
  • H. Helava
    • 2
  • Yu. Makarov
    • 2
  1. 1.Department of PhysicsVirginia Commonwealth UniversityRichmondUSA
  2. 2.Nitride Crystals, Inc.Deer ParkUSA
  3. 3.Saint-Petersburg National Research University of Information Technologies, Mechanics and OpticsSaint PetersburgRussia

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