Journal of Electronic Materials

, Volume 43, Issue 11, pp 4349–4356 | Cite as

Structural and Electrical Properties of Ta ax La(1−a)x O y Thin Films

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Abstract

Effect of annealing temperature on the characteristics of sol–gel-driven Ta ax La(1−a)x O y thin film spin-coated on Si substrate as a high-k gate dielectric was studied. Ta ax La(1−a)x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3x La0.7x Oy film had an amorphous structure. Therefore, Ta0.3x La0.7x O y film was chosen to continue the present studies. The morphology of Ta0.3x La0.7x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3x La0.7x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance–voltage (C–V) and current density–voltage (J–V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3x La0.7x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10−6 A/cm2 at 1 V).

Keywords

TaaxLa(1−a)xOy film amorphous materials nanostructures  high-k gate dielectric 
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Copyright information

© The Minerals, Metals & Materials Society 2014

Authors and Affiliations

  1. 1.Department of Solid State PhysicsUniversity of MazandaranBabolsarIran

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