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Journal of Electronic Materials

, Volume 43, Issue 11, pp 3999–4002 | Cite as

Hall Effect Studies of AlGaAs Grown by Liquid-Phase Epitaxy for Tandem Solar Cell Applications

  • Xin ZhaoEmail author
  • Kyle H. Montgomery
  • Jerry M. Woodall
Article
  • 161 Downloads

Abstract

We report results from Hall effect studies on Al x Ga1−x As (x = 0.23–0.24) with bandgap energies of 1.76 ± 0.01 eV grown by liquid-phase epitaxy (LPE). Room-temperature Hall measurements on unintentionally doped AlGaAs revealed p-type background doping for concentrations in the range 3.7–5.2 × 1016 cm−3. Sn, Te, Ge, and Zn-doped AlGaAs were also characterized to study the relationship between doping concentrations and the atomic fractions of the dopants in the melt. Temperature-dependent Hall measurements were performed to determine the activation energies of the four dopants. Deep donor levels (DX centers) were dominant for Sn-doped Al0.24Ga0.76As, but not for Te-doped Al0.24Ga0.76As. Comparison of the temperature-dependent Hall effect results for unintentionally and intentionally doped Al0.24Ga0.76As indicated that the impurity contributing to the p-type background doping had the same activation energy as Mg. We thus suggest a Te-doped emitter and an undoped or Ge-doped base to maximize the efficiency of Al x Ga1−x As (x ∼ 0.23) solar cells grown by LPE.

Keywords

AlGaAs liquid-phase epitaxy Hall effect doping tandem solar cell 

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References

  1. 1.
    T.P. White, N.N. Lal, and K.R. Catchpole, IEEE J. Photovolt. 4, 208 (2014).CrossRefGoogle Scholar
  2. 2.
    S.R. Kurtz, P. Faine, and J.M. Olson, J. Appl. Phys. 68, 1890 (1990).CrossRefGoogle Scholar
  3. 3.
    J.R. Lang, J. Faucher, S. Tomasulo, K.N. Yaung, and M.L. Lee, Appl. Phys. Lett. 103, 092102 (2013).CrossRefGoogle Scholar
  4. 4.
    I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).CrossRefGoogle Scholar
  5. 5.
    K. Tanabe, K. Watanabe, and Y. Arakawa, Sci. Rep. 2, 1 (2012).CrossRefGoogle Scholar
  6. 6.
    J.M. Woodall, R.M. Potemski, S.E. Blum, and R. Lynch, Appl. Phys. Lett. 20, 375 (1972).CrossRefGoogle Scholar
  7. 7.
    M.R. Islam, R.V. Chelakara, J.G. Neff, K.G. Fertitta, P.A. Grudowski, A.L. Holmes, F.J. Ciuba, R.D. Dupuis, and J.E. Fouquet, J. Electron. Mater. 24, 787 (1995).CrossRefGoogle Scholar
  8. 8.
    E.F. Schubert, Light-Emitting Diodes (Cambridge: Cambridge University Press, 2003), pp. 1–7.Google Scholar
  9. 9.
    S. Heckelmann, D. Lackner, F. Dimroth, and A.W. Bett, Appl. Phys. Lett. 103, 132102 (2013).CrossRefGoogle Scholar
  10. 10.
    X. Zhao, K.H. Montgomery, and J.M. Woodall, J. Electron. Mater. 43, 894 (2014).CrossRefGoogle Scholar
  11. 11.
    W.C. Liu, J. Mater. Sci. 25, 1765 (1990).CrossRefGoogle Scholar
  12. 12.
    M.B. Panish, J. Appl. Phys. 44, 2667 (1973).CrossRefGoogle Scholar
  13. 13.
    A.W. Nelson and P.N. Robson, J. Appl. Phys. 54, 3965 (1983).CrossRefGoogle Scholar
  14. 14.
    S. Mukai, Y. Makita, and S. Gonda, J. Appl. Phys. 50, 1304 (1979).CrossRefGoogle Scholar
  15. 15.
    M.K. Hudait, P. Modak, S. Hardikar, and S.B. Krupanidhi, J. Appl. Phys. 82, 4931 (1997).CrossRefGoogle Scholar
  16. 16.
    S.C. Jain, J.M. McGregor, and D.J. Roulston, J. Appl. Phys. 68, 3747 (1990).CrossRefGoogle Scholar
  17. 17.
    G.B. Stringfellow and R. Linneback, J. Appl. Phys. 51, 2212 (1980).CrossRefGoogle Scholar
  18. 18.
    E.F. Schubert and K. Ploog, Phys. Rev. B 30, 7021 (1984).CrossRefGoogle Scholar
  19. 19.
    P.M. Mooney, J. Appl. Phys. 67, R1 (1990).CrossRefGoogle Scholar
  20. 20.
    N. Chand, T. Henderson, J. Clem, W.T. Masselink, R. Fischer, Y.C. Chang, and H. Marko, Phys. Rev. B 30, 4481 (1984).CrossRefGoogle Scholar
  21. 21.
    A.J. Springthorpe, F.D. King, and A. Becke, J. Electron. Mater. 4, 101 (1975).CrossRefGoogle Scholar
  22. 22.
    R. Hellman and G. Oelgart, Semicond. Sci. Technol. 5, 1040 (1990).CrossRefGoogle Scholar
  23. 23.
    K. Masu, M. Konagai, and K. Takahashi, J. Appl. Phys. 51, 1060 (1980).CrossRefGoogle Scholar

Copyright information

© The Minerals, Metals & Materials Society 2014

Authors and Affiliations

  • Xin Zhao
    • 1
    Email author
  • Kyle H. Montgomery
    • 1
  • Jerry M. Woodall
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of CaliforniaDavisUSA

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