Journal of Electronic Materials

, Volume 43, Issue 11, pp 3999–4002 | Cite as

Hall Effect Studies of AlGaAs Grown by Liquid-Phase Epitaxy for Tandem Solar Cell Applications

  • Xin ZhaoEmail author
  • Kyle H. Montgomery
  • Jerry M. Woodall


We report results from Hall effect studies on Al x Ga1−x As (x = 0.23–0.24) with bandgap energies of 1.76 ± 0.01 eV grown by liquid-phase epitaxy (LPE). Room-temperature Hall measurements on unintentionally doped AlGaAs revealed p-type background doping for concentrations in the range 3.7–5.2 × 1016 cm−3. Sn, Te, Ge, and Zn-doped AlGaAs were also characterized to study the relationship between doping concentrations and the atomic fractions of the dopants in the melt. Temperature-dependent Hall measurements were performed to determine the activation energies of the four dopants. Deep donor levels (DX centers) were dominant for Sn-doped Al0.24Ga0.76As, but not for Te-doped Al0.24Ga0.76As. Comparison of the temperature-dependent Hall effect results for unintentionally and intentionally doped Al0.24Ga0.76As indicated that the impurity contributing to the p-type background doping had the same activation energy as Mg. We thus suggest a Te-doped emitter and an undoped or Ge-doped base to maximize the efficiency of Al x Ga1−x As (x ∼ 0.23) solar cells grown by LPE.


AlGaAs liquid-phase epitaxy Hall effect doping tandem solar cell 


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Copyright information

© The Minerals, Metals & Materials Society 2014

Authors and Affiliations

  • Xin Zhao
    • 1
    Email author
  • Kyle H. Montgomery
    • 1
  • Jerry M. Woodall
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of CaliforniaDavisUSA

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