Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules
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Results for low dimensional p-type Ge/SiGe superlattices with Ge quantum wells of 3.43 nm are presented. A range of microfabricated test structures have been developed to characterise the cross-plane electrical and thermal properties of the Ge/SiGe heterostructures. These superlattices were directly grown on 100-mm-diameter silicon wafers by a chemical vapour deposition growth system with rates up to 6 nm/s. Quantum well and quantum mechanical tunnel barriers with dimensions down to \(\sim1\)nm have been designed, grown and tested; they demonstrate a ZT of 0.08 ± 0.011 and power factor of 1.34 ± 0.15 m W m−1 K−2 at 300 K. A complete microfabricated module using indium bump-bonding is reported together with preliminary results on unoptimised material and leg dimensions. Routes to optimise the material and modules are discussed.
KeywordsThermolectrics silicon germanium vertical structure thermolectric module superlattice
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The work was undertaken as part of the GREEN Silicon project (No. 257750) funded by the EC ICT Future Emerging Technologies Proactive Initiative “Towards Zeropower ICT”. The authors would like to thank the staff of the James Watt Nanofabrication Centre for help in fabricating the devices in this paper.
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