Journal of Electronic Materials

, Volume 43, Issue 8, pp 2963–2969

Mid-Wavelength Infrared nBn for HOT Detectors

Open Access
Article

DOI: 10.1007/s11664-014-3161-y

Cite this article as:
Rogalski, A. & Martyniuk, P. Journal of Elec Materi (2014) 43: 2963. doi:10.1007/s11664-014-3161-y

Abstract

Recently, new strategies to achieve high-operating-temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, alternative materials such as superlattices, and multistage (cascade) infrared devices. In the case of nBn detectors, the barriers must be correctly engineered and correctly located in the device structure to achieve optimal performance. This paper presents the limitations of barrier unipolar devices and the progress in their development for HOT operation in the mid-wavelength infrared range. Their performance is compared with state-of-the-art HgCdTe photodiodes.

Keywords

Unipolar barrier detectors nBn detectors InAsSb ternary alloy InAs/GaSb type II superlattices HgCdTe photodetectors 

Copyright information

© The Author(s) 2014

Open AccessThis article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited.

Authors and Affiliations

  1. 1.Institute of Applied PhysicsMilitary University of TechnologyWarsawPoland

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