Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p +-Si Substrates by MOVPE
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Development of an electron-collecting-type pixel array by use of an epitaxially grown thick single-crystal CdTe layer on p +-Si substrate is discussed. To achieve such an array with an n-CdTe/p-like CdTe/p +-Si heterojunction diode structure, charge transport at the p-like CdTe/p +-Si heterointerface was studied. It was confirmed that ohmic conduction via holes occurs at this interface. A single-element detector was then fabricated by growth of 40 μm thick undoped p-like CdTe then 5 μm thick n-CdTe layers on the p +-Si substrate. Rectification by the diode detector was good, and its energy-resolving capability was demonstrated by detection of gamma peaks from the 241Am source, thus confirming the feasibility of using this structure for fabrication of an electron-collecting-type array.
KeywordsCdTe epitaxial growth gamma-ray imaging electron collection
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