Journal of Electronic Materials

, Volume 43, Issue 8, pp 2860–2863 | Cite as

Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p +-Si Substrates by MOVPE

  • K. Yasuda
  • M. Niraula
  • Y. Wajima
  • H. Yamashita
  • N. Takai
  • Y. Suzuki
  • M. Matsumoto
  • Y. Tsukamoto
  • Y. Tsukamoto
  • Y. Agata
Article
  • 132 Downloads

Abstract

Development of an electron-collecting-type pixel array by use of an epitaxially grown thick single-crystal CdTe layer on p +-Si substrate is discussed. To achieve such an array with an n-CdTe/p-like CdTe/p +-Si heterojunction diode structure, charge transport at the p-like CdTe/p +-Si heterointerface was studied. It was confirmed that ohmic conduction via holes occurs at this interface. A single-element detector was then fabricated by growth of 40 μm thick undoped p-like CdTe then 5 μm thick n-CdTe layers on the p +-Si substrate. Rectification by the diode detector was good, and its energy-resolving capability was demonstrated by detection of gamma peaks from the 241Am source, thus confirming the feasibility of using this structure for fabrication of an electron-collecting-type array.

Keywords

CdTe epitaxial growth gamma-ray imaging electron collection 

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Copyright information

© TMS 2014

Authors and Affiliations

  • K. Yasuda
    • 1
  • M. Niraula
    • 1
  • Y. Wajima
    • 1
  • H. Yamashita
    • 1
  • N. Takai
    • 1
  • Y. Suzuki
    • 1
  • M. Matsumoto
    • 1
  • Y. Tsukamoto
    • 1
  • Y. Tsukamoto
    • 1
  • Y. Agata
    • 1
  1. 1.Graduate School of EngineeringNagoya Institute of TechnologyNagoyaJapan

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