Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy
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Annealing conditions of CdTe layers grown on Si substrates by metalorganic vapor-phase epitaxy were studied. Typically, 3-μm-thick n-type (211) CdTe layers were annealed for 60 s in flowing hydrogen at atmospheric pressure by covering their surfaces with bulk CdTe wafers. At annealing temperatures above 700°C, improvement of crystal quality was confirmed from full-width at half-maximum values of double-crystal rocking-curve measurements and x-ray diffraction measurements. Photoluminescence measurements revealed no deterioration of electrical properties in the annealed n-CdTe layers. Furthermore, annealing at 900°C improved the performance of radiation detectors with structure of p-like CdTe/n-CdTe/n +-Si substrate.
KeywordsCdTe/Si MOVPE rapid thermal annealing radiation detectors
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- 12.M. Niraula, K. Yasuda, N. Fujimura, T. Tachi, H. Inuzuka, S. Namba, T. Kondo, S. Muramatsu, and Y. Agata, IEEE Trans. Nucl. Sci. 59, 3201 (2012).Google Scholar