Journal of Electronic Materials

, Volume 42, Issue 11, pp 3125–3128 | Cite as

Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

  • K. Yasuda
  • M. Niraula
  • S. Namba
  • T. Kondo
  • S. Muramatsu
  • H. Yamashita
  • Y. Wajima
  • Y. Agata
Article

Abstract

Annealing conditions of CdTe layers grown on Si substrates by metalorganic vapor-phase epitaxy were studied. Typically, 3-μm-thick n-type (211) CdTe layers were annealed for 60 s in flowing hydrogen at atmospheric pressure by covering their surfaces with bulk CdTe wafers. At annealing temperatures above 700°C, improvement of crystal quality was confirmed from full-width at half-maximum values of double-crystal rocking-curve measurements and x-ray diffraction measurements. Photoluminescence measurements revealed no deterioration of electrical properties in the annealed n-CdTe layers. Furthermore, annealing at 900°C improved the performance of radiation detectors with structure of p-like CdTe/n-CdTe/n +-Si substrate.

Keywords

CdTe/Si MOVPE rapid thermal annealing radiation detectors 

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Copyright information

© TMS 2013

Authors and Affiliations

  • K. Yasuda
    • 1
  • M. Niraula
    • 1
  • S. Namba
    • 1
  • T. Kondo
    • 1
  • S. Muramatsu
    • 1
  • H. Yamashita
    • 1
  • Y. Wajima
    • 1
  • Y. Agata
    • 1
  1. 1.Graduate School of EngineeringNagoya Institute of TechnologyNagoyaJapan

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