Simultaneous Formation of Ohmic Contacts on p +- and n +-4H-SiC Using a Ti/Ni Bilayer
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In this work, Ti/Ni bilayer contacts were fabricated on both p +- and n +-4H-SiC formed by ion implantation, and the effects of the Ti interlayer on the contact resistance and interfacial microstructure were studied. Adoption of a thin (10 nm) Ti interlayer resulted in specific contact resistance of 4.8 μΩ cm2 and 1.3 mΩ cm2 on n +- and p +-4H-SiC, respectively, comparable to the values for contacts using only Ni. Moreover, contacts using Ti/Ni provide a flat and uniform interface between Ni2Si and SiC, whereas discontinuous, agglomerated Ni2Si islands are formed without the use of a Ti interlayer. In addition, the Ti interlayer was demonstrated to effectively dissociate the thin oxide film on SiC, which is advantageous for low-resistance, reliable ohmic contact formation. In summary, use of a Ti/Ni bilayer is a promising solution for one-step formation of ohmic contacts on both p +- and n +-4H-SiC, being especially suitable for SiC n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) fabrication.
Keywords4H-SiC ohmic contact Ti Ni
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