Journal of Electronic Materials

, Volume 42, Issue 11, pp 3259–3266 | Cite as

Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator

  • P.-Y. Chan
  • M. Gogna
  • E. Suarez
  • F. Al-Amoody
  • S. Karmakar
  • B. I. Miller
  • E. K. Heller
  • J. E. Ayers
  • F. C. Jain
Article

Abstract

An indium gallium arsenide quantum-dot-gate field-effect transistor using Zn0.95Mg0.05S as the gate insulator is presented in this paper, showing three output states which can be used in multibit logic applications. The spatial wavefunction switching effect in this transistor has been investigated, and modeling simulations have shown supporting evidence that additional output states can be achieved in one transistor.

Keywords

InGaAs MOSFET high κ ZnMgS gate dielectric II–VI insulator quantum dot gate multistate behavior 

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Copyright information

© TMS 2013

Authors and Affiliations

  • P.-Y. Chan
    • 1
  • M. Gogna
    • 2
  • E. Suarez
    • 1
  • F. Al-Amoody
    • 3
  • S. Karmakar
    • 3
  • B. I. Miller
    • 1
  • E. K. Heller
    • 4
  • J. E. Ayers
    • 1
  • F. C. Jain
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of ConnecticutStorrsUSA
  2. 2.Global Foundries, Inc.MaltaUSA
  3. 3.Intel CorporationHillsboroUSA
  4. 4.Synopsys, Inc.OssiningUSA

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