Structure and Transport Properties of Bulk Nanothermoelectrics Based on BixSb2−xTe3 Fabricated by SPS Method
Ball milling with subsequent spark plasma sintering (SPS) was used to fabricate bulk nanothermoelectrics based on BixSb2−xTe3. The SPS technique enables reduced size of grains in comparison with the hot-pressing method. The electrical and thermal conductivities, Seebeck coefficient, and thermoelectric figure of merit as functions of temperature and alloy composition were measured for different sintering temperatures. The greatest value of the figure of merit ZT = 1.25 was reached at the temperature of 90°C to 100°C in Bi0.4Sb1.6Te3 for sintering temperature of 450°C to 500°C. The volume and quantitative distributions of size of coherent dispersion areas (CDA) were calculated for different sintering temperatures. The phonon thermal conductivity of nanostructured BixSb2−xTe3 was investigated theoretically taking into account phonon scattering on grain boundaries and nanoprecipitates.
KeywordsThermoelectrics bulk nanostructures thermoelectric figure of merit bismuth telluride coherent dispersion areas thermal conductivity
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