Journal of Electronic Materials

, Volume 42, Issue 7, pp 2110–2113 | Cite as

Structure and Transport Properties of Bulk Nanothermoelectrics Based on BixSb2−xTe3 Fabricated by SPS Method

  • L. P. Bulat
  • I. A. Drabkin
  • V. V. Karatayev
  • V. B. Osvenskii
  • Yu. N. Parkhomenko
  • M. G. Lavrentev
  • A. I. Sorokin
  • D. A. Pshenai-Severin
  • V. D. Blank
  • G. I. Pivovarov
  • V. T. Bublik
  • N. Yu. Tabachkova
Article

Abstract

Ball milling with subsequent spark plasma sintering (SPS) was used to fabricate bulk nanothermoelectrics based on BixSb2−xTe3. The SPS technique enables reduced size of grains in comparison with the hot-pressing method. The electrical and thermal conductivities, Seebeck coefficient, and thermoelectric figure of merit as functions of temperature and alloy composition were measured for different sintering temperatures. The greatest value of the figure of merit ZT = 1.25 was reached at the temperature of 90°C to 100°C in Bi0.4Sb1.6Te3 for sintering temperature of 450°C to 500°C. The volume and quantitative distributions of size of coherent dispersion areas (CDA) were calculated for different sintering temperatures. The phonon thermal conductivity of nanostructured BixSb2−xTe3 was investigated theoretically taking into account phonon scattering on grain boundaries and nanoprecipitates.

Keywords

Thermoelectrics bulk nanostructures thermoelectric figure of merit bismuth telluride coherent dispersion areas thermal conductivity 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    M.S. Dresselhaus, G. Chen, M.Y. Tang, R. Yang, H. Lee, D. Wang, Z. Ren, J.-P. Fleurial, and P. Gogna, Adv. Mater. 19, 1043 (2007).CrossRefGoogle Scholar
  2. 2.
    A.J. Minnich, M.S. Dresselhaus, Z.F. Ren, and G. Chen, Energy Environ. Sci. 2, 466 (2009).CrossRefGoogle Scholar
  3. 3.
    A.V. Dmitriev and I.P. Zvyagin, Phys. Usp. 53, 789 (2010).CrossRefGoogle Scholar
  4. 4.
    Y. Lan, A.J. Minnich, G. Chen, and Z. Ren, Adv. Funct. Mater. 20, 357 (2010).CrossRefGoogle Scholar
  5. 5.
    B. Poudel, Q. Hao, Y. Ma, Y. Lan, A. Minnich, Y. Bo, X. Yan, D. Wang, A. Muto, D. Vashaee, X. Chen, J. Liu, M.S. Dresselhaus, and G. Chen, Zhifeng Ren. Sci. 320, 634 (2008).Google Scholar
  6. 6.
    Y. Ma, Q. Hao, B. Poudel, Y. Lan, B. Yu, D. Wang, G. Chen, and Zh. Ren, Nano Lett. 8, 2580 (2008).CrossRefGoogle Scholar
  7. 7.
    L.P. Bulat, V.T. Bublik, I.A. Drabkin, V.V. Karataev, V.B. Osvenskii, Yu.N. Parkhomenko, G.I. Pivovarov, D.A. Pshenai-Severin, and N.Yu. Tabachkova, J. Electron. Mater. 39, 1650 (2010).CrossRefGoogle Scholar
  8. 8.
    L.P. Bulat, D.A. Pshenai-Severin, I.A. Drabkin, V.V. Karatayev, V.B. Osvensky, Yu.N. Parkhomenko, V.D. Blank, G.I. Pivovarov, V.T. Bublik, and N.Yu. Tabachkova, J. Thermoelectricity 1, 1 (2011).Google Scholar
  9. 9.
    V.N. Abryutin, I.A. Drabkin, M.I. Maronchuk, V.B. Osvensky, in Thermoelectrics and Their Applications, ed. by M.V. Vedernikov (Ioffe Physical-Technical Institute, St. Petersburg, 2004), p. 303 (in Russian).Google Scholar
  10. 10.
    W. Xie, J. He, H.J. Kang, X. Tang, Zh. Song, M. Laver, Sh. Wang, J. Copley, C. Brown, Q. Zhang, and T.M. Tritt, Nano Lett. 10, 3283 (2010).CrossRefGoogle Scholar
  11. 11.
    L.P. Bulat, I.A. Drabkin, V.V. Karataev, V.B. Osvenskii, and D.A. Pshenai-Severin, Phys. Sol. State. 52, 1836 (2010).CrossRefGoogle Scholar
  12. 12.
    L.P. Bulat, I.A. Drabkin, V.V. Karataev, V.B. Osvenskii, Yu.N. Parkhomenko, D.A. Pshenai-Severin, G.I. Pivovarov, and N.Yu. Tabachkova, Phys. Sol. State. 53, 29 (2011).CrossRefGoogle Scholar
  13. 13.
    V.T. Bublik, Z.M. Dashevsky, I.A. Drabkin, V.V. Karatayev, V.A. Kasian, V.B. Osvensky, G.I. Pivovarov, D.A. Pshenai-Severin, N.Yu. Tabachkova, N. Bohmstein, in Thermoelectrics and Their Applications, ed. by M.V. Vedernikov (Ioffe Physical-Technical Institute, St. Petersburg, 2010), p. 47 (in Russian).Google Scholar

Copyright information

© TMS 2013

Authors and Affiliations

  • L. P. Bulat
    • 1
  • I. A. Drabkin
    • 2
  • V. V. Karatayev
    • 2
  • V. B. Osvenskii
    • 2
  • Yu. N. Parkhomenko
    • 2
  • M. G. Lavrentev
    • 2
  • A. I. Sorokin
    • 2
  • D. A. Pshenai-Severin
    • 3
  • V. D. Blank
    • 4
  • G. I. Pivovarov
    • 4
  • V. T. Bublik
    • 5
  • N. Yu. Tabachkova
    • 5
  1. 1.National Research University ITMOSt. PetersburgRussia
  2. 2.GIREDMET Ltd.MoscowRussia
  3. 3.Ioffe Physical Technical InstituteSt PetersburgRussia
  4. 4.Technological Institute of Superhard and New Carbon MaterialsTroitskRussia
  5. 5.National University of Science and Technology “MISIS”MoscowRussia

Personalised recommendations