Journal of Electronic Materials

, Volume 42, Issue 6, pp 956–962 | Cite as

The Stressing Effect of Electromigration from the Maxwell Stress and a Preliminary Mean-Time-to-Failure Analysis

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Abstract

As temperature increases, it is suggested that atoms on lattice sites serve as dynamic defects and cause a much more homogeneous distribution of the Maxwell stress throughout the crystal lattice compared with that caused by static defects. Though this stressing effect mostly leads to Joule heating, it also results in distortion of the crystal lattice, which leads to a decrease in the activation energy for atomic diffusion and causes enhancements in the phase growth rates at both interfaces of diffusion couples. Due to this stressing effect, the decrease in the activation energy is proportional to a square term of the current density J. A mean-time-to-failure analysis is performed for failure caused by excessive growth of intermediate phases, and a mean-time-to-failure (MTTF) equation is found. This equation appears similar to Black’s equation but with an extra exponential term arising from the stressing effect of the crystal lattice.

Keywords

Electromigration stressing effect Black’s equation 
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Copyright information

© TMS 2013

Authors and Affiliations

  1. 1.Department of Astronautical Science and MechanicsHarbin Institute of TechnologyHarbinPeople’s Republic of China

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