Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films
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CdTe thin films of 500 Å thickness prepared by thermal evaporation technique were analyzed for leakage current and conduction mechanisms. Metal–insulator–metal (MIM) capacitors were fabricated using these films as a dielectric. These films have many possible applications, such as passivation for infrared diodes that operate at low temperatures (80 K). Direct-current (DC) current–voltage (I–V) and capacitance–voltage (C–V) measurements were performed on these films. Furthermore, the films were subjected to thermal cycling from 300 K to 80 K and back to 300 K. Typical minimum leakage currents near zero bias at room temperature varied between 0.9 nA and 0.1 μA, while low-temperature leakage currents were in the range of 9.5 pA to 0.5 nA, corresponding to resistivity values on the order of 108 Ω-cm and 1010 Ω-cm, respectively. Well-known conduction mechanisms from the literature were utilized for fitting of measured I–V data. Our analysis indicates that the conduction mechanism in general is Ohmic for low fields <5 × 104 V cm−1, while the conduction mechanism for fields >6 × 104 V cm−1 is modified Poole–Frenkel (MPF) and Fowler–Nordheim (FN) tunneling at room temperature. At 80 K, Schottky-type conduction dominates. A significant observation is that the film did not show any appreciable degradation in leakage current characteristics due to the thermal cycling.
KeywordsCdTe thin film MIM conduction mechanism modified Poole–Frenkel Richardson Schottky
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