Journal of Electronic Materials

, Volume 42, Issue 1, pp 26–32 | Cite as

Microstructure of GaN1−x Bi x

  • Z. Liliental-Weber
  • R. Dos Reis
  • A.X. Levander
  • K.M. Yu
  • W. Walukiewicz
  • S.V. Novikov
  • C.T. Foxon
Article
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Abstract

In this paper we describe detailed transmission electron microscopy studies of GaN1−x Bi x with 0.05 < x < 0.18 grown by low-temperature molecular beam epitaxy under Ga-rich conditions. Microstructural transformation from columnar growth separated by thin amorphous areas in the films with lowest Bi content (5%) to pseudo-amorphous structure with crystalline grains embedded in the amorphous matrix in the samples with higher Bi content (13% to 18%) was observed. In addition, metallic Bi segregation occurred in the samples with the highest Bi concentration. An abrupt decrease in absorption edge energy is found in samples with higher Bi content.

Keywords

Microstructure TEM GaNBi highly mismatched semiconductors absorption bandgap 
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Copyright information

© TMS (outside the USA) 2012

Authors and Affiliations

  • Z. Liliental-Weber
    • 1
  • R. Dos Reis
    • 1
    • 2
  • A.X. Levander
    • 1
    • 3
  • K.M. Yu
    • 1
  • W. Walukiewicz
    • 1
  • S.V. Novikov
    • 4
  • C.T. Foxon
    • 4
  1. 1.Materials Sciences DivisionLawrence Berkeley National LaboratoryBerkeleyUSA
  2. 2.Instituto de FísicaUFRGSPorto AllegreBrazil
  3. 3.Department of Materials Science & EngineeringUniversity of CaliforniaBerkeleyUSA
  4. 4.School of Physics and AstronomyUniversity of NottinghamNottinghamUK

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