Power Factor Characterization of Ge/SiGe Thermoelectric Superlattices at 300 K
To accurately characterize the efficiency of thermoelectric materials and characterize the maximum power that they can produce, a device using micro/nanofabrication techniques has been developed, enabling all three properties included in the figure of merit, ZT, of a thermoelectric material to be measured using a single device. The fabrication and testing of the device are presented. The electrical conductivity and Seebeck coefficient of Ge/SiGe heterostructures grown by low-energy plasma-enhanced chemical vapor deposition are used for demonstration. Experimental results as a function of quantum well width are presented, demonstrating power factors up to 6.02 ± 0.05 mW m−1 K−2 at 300 K. Modeling and physical characterization demonstrate that these results are presently limited by high threading dislocation density.
KeywordsThermoelectrics electrical conductivity Seebeck coefficient power factor device fabrication SiGe
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- 3.S. Cecchi, T. Etzelstorfer, E. Müller, A. Samarelli, L.F. Llin, D. Chrastina, G. Isella, J. Stangl, and D.J. Paul, J. Mater. Sci. (2012). doi: 10.1007/s10853-012-6825-0..
- 4.S.A. McAuley, H. Ashraf, L. Atabo, A. Chambers, S. Hall, J. Hopkins, and G. Nicholls, J. Phys. D. 34, 2769 (2001).Google Scholar
- 5.H. Tsuda, M. Mori, Y. Takao, K. Eriguchi, and K. Ono, Jpn. J. Appl. Phys. 49 (2010)Google Scholar
- 6.D. Chrastina, S. Cecchi, J.P. Hague, F. Isa, J. Frigerio, A. Samarelli, L. Ferre-Llin, D.J. Paul, E. Mller, T. Etzelstorfer, J. Stangl, and G. Isella, Thin Solid Films (2012).Google Scholar
- 7.H. Zhou, G. Mills, B.K. Chong, A. Midha, L. Donaldson, and J.M.R. Weaver, J. Vac. Sci. Technol. A. 17, 2233 (1999).Google Scholar
- 8.P.S. Dobson, G. Mills, and J.M.R. Weaver, Rev. Sci. Instrum. 76, 054901 (2005).Google Scholar