Journal of Electronic Materials

, Volume 41, Issue 8, pp 2184–2192

Fabrication and Circuit Modeling of NMOS Inverter Based on Quantum Dot Gate Field-Effect Transistors

  • Supriya Karmakar
  • John A. Chandy
  • Mukesh Gogna
  • Faquir C. Jain
Article

Abstract

This paper presents the fabrication of a negative-channel metal–oxide–semiconductor (NMOS) inverter based on quantum dot gate field-effect transistors (QDG-FETs). A QDG-FET produces one intermediate state in its transfer characteristic. NMOS inverters based on a QDG-FET produce three states in their transfer characteristic. The generation of the third state in the inverter characteristic makes this a promising circuit element for multivalued logic implementation. A circuit simulation result based on the Berkley simulation (BSIM) circuit model of the QDG-FET is also presented in this paper, predicting the fabricated device characteristic.

Keywords

Quantum dot gate FET three-state FET NMOS inverter three-state NMOS inverter 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© TMS 2012

Authors and Affiliations

  • Supriya Karmakar
    • 1
    • 2
  • John A. Chandy
    • 1
  • Mukesh Gogna
    • 1
  • Faquir C. Jain
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of ConnecticutStorrsUSA
  2. 2.Intel CorporationHillsboroUSA

Personalised recommendations