Journal of Electronic Materials

, Volume 41, Issue 5, pp 837–844 | Cite as

Synthesis of Ge1−xSnx Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM)

  • A. Bhatia
  • W.M. Hlaing Oo
  • G. Siegel
  • P.R. Stone
  • K.M. Yu
  • M.A. Scarpulla
Article

Abstract

Ge1−xSnx thin films are interesting for all-group-IV optoelectronics because of a crossover to a direct bandgap with dilute Sn alloying. However, Sn has vanishing room-temperature equilibrium solubility in Ge, making their synthesis very challenging. Herein, we report on our attempts to synthesize Ge1−xSnx films on Ge (001) using ion implantation and pulsed laser melting (II-PLM). A maximum of 2 at.% Sn was incorporated with our experimental conditions in the samples as determined by Rutherford back scattering spectroscopy. A red-shift in the Ge optical phonon branch and increased absorption below the Ge bandgap with increasing Sn concentration indicate Sn-induced lattice- and band-structure changes after II-PLM. However, ion-channeling and electron microscopy show that the films are not of sufficient epitaxial quality for use in devices.

Keywords

Ge1−xSnx alloy pulsed laser melting (PLM) ion implantation 

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Copyright information

© TMS 2012

Authors and Affiliations

  • A. Bhatia
    • 1
  • W.M. Hlaing Oo
    • 1
  • G. Siegel
    • 1
  • P.R. Stone
    • 2
  • K.M. Yu
    • 2
  • M.A. Scarpulla
    • 1
    • 3
  1. 1.Materials Science and EngineeringUniversity of UtahSalt Lake CityUSA
  2. 2.Lawrence Berkeley National LaboratoryBerkeleyUSA
  3. 3.Electrical and Computer EngineeringUniversity of UtahSalt Lake CityUSA

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