New Layered Intergrowths in the Sn-Mo-Se System
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Abstract
Several new metastable layered intergrowths based on tin monoselenide and molybdenum diselenide, [(SnSe)1+δ ] m [MoSe2] n , have been prepared by self-assembly from elemental nanolaminate precursors deposited by physical vapor deposition. The thin-film specimens were characterized by laboratory x-ray reflectivity and diffraction, synchrotron x-ray diffraction, electron probe microanalysis, and scanning transmission electron microscopy techniques, all of which indicate the formation of intergrowths with precise layering and well-defined composition. Analysis of in-plane diffraction originating from the individual components yields a structural misfit of δ = 0.06 and suggests turbostratic misorientation of the individual layers. In contrast to most known [(MX)1+δ ] m [TX2] n -type chalcogenide compounds, electrical transport data for the [(SnSe)1+δ ]1[MoSe2]1 composition are consistent with semiconducting behavior.
Keywords
Thermoelectric intergrowth semiconductor synthesis novel materials thin film modulated elemental reactantsPreview
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References
- 1.C. Heideman, N. Nguyen, J. Hanni, Q. Lin, S. Duncombe, D.C. Johnson, and P. Zschack, J. Solid State Chem. 181, 1701 (2008).CrossRefGoogle Scholar
- 2.Q. Lin, C.L. Heideman, N. Nguyen, P. Zschack, C. Chiritescu, D.G. Cahill, and D.C. Johnson, Eur. J. Inorg. Chem. 2008, 2382 (2008).CrossRefGoogle Scholar
- 3.Q. Lin, M. Smeller, C.L. Heideman, P. Zschack, M. Koyano, M.D. Anderson, R. Kykyneshi, D.A. Keszler, I.M. Anderson, and D.C. Johnson, Chem. Mater. 22, 1002 (2010).CrossRefGoogle Scholar
- 4.M. Noh, C.D. Johnson, M.D. Hornbostel, J. Thiel, and D.C. Johnson, Chem. Mater. 8, 1625 (1996).CrossRefGoogle Scholar
- 5.G.A. Wiegers, Prog. Solid State Chem. 24, 1 (1996).CrossRefGoogle Scholar
- 6.P. Zschack, C. Heideman, C. Mortensen, N. Nguyen, M. Smeller, Q. Lin, and D.C. Johnson, J. Electron. Mater. 38, 1402 (2009).CrossRefGoogle Scholar
- 7.C. Chiritescu, D.G. Cahill, C. Heideman, Q. Lin, C. Mortensen, N.T. Nguyen, D.C. Johnson, R. Rostek, and H. Böttner, J. Appl. Phys. 104, 033533 (2008).CrossRefGoogle Scholar
- 8.A. Mavrokefalos, Q. Lin, M. Beekman, J.H. Seol, Y.J. Lee, H. Kong, M.T. Pettes, D.C. Johnson, and L. Shi, Appl. Phys. Lett. 96, 181908 (2010).CrossRefGoogle Scholar
- 9.H. Wiedemeier and H.G. von Schnering, Z. Krist. 148, 295 (1978).CrossRefGoogle Scholar
- 10.P.B. James and M.T. Lavik, Acta Crystallogr. 16, 1183 (1962).CrossRefGoogle Scholar
- 11.A.F. Ioffe, The Physics of Semiconductors (New York: Academic, 1960).Google Scholar
- 12.Q. Lin, S. Tepfer, C. Heideman, C. Mortensen, N. Nguyen, P. Zschack, M. Beekman, and D.C. Johnson, J. Mater. Res. 26, 1866 (2011).CrossRefGoogle Scholar