Journal of Electronic Materials

, Volume 41, Issue 6, pp 1662–1666 | Cite as

Thermoelectric Properties of TlGdQ2 (Q = Se, Te) and Tl9GdTe6

  • Cheriyedath Raj Sankar
  • Savitree Bangarigadu-Sanasy
  • Holger Kleinke
Article

The ternary thallium chalcogenides TlGdQ2 (Q = Se, Te), and Tl9GdTe6 were synthesized, and their thermoelectric properties were evaluated. The chalcogenides TlGdQ2 are isostructural with TlSbQ2 (space group \( R\bar{3}m \)), adopting the α-NaFeO2 structure type, and Tl9GdTe6 is isostructural with Tl9BiTe6 (space group I4/mcm). TlGdSe2 was found to be a wide-bandgap semiconductor with rather high Seebeck coefficient and low electrical conductivity. The corresponding telluride TlGdTe2 behaves like a doped semiconductor, and possesses very low thermal conductivity at room temperature on the order of 0.5 W m−1 K−1, a property advantageous for thermoelectric applications. Tl9GdTe6 exhibits relatively high room-temperature electrical conductivity of around 850 Ω−1 cm−1 and a low Seebeck coefficient of 27 μV K−1, yielding a low power factor. Of these three compounds, TlGdTe2 exhibits the best thermoelectric properties, with maximum dimensionless figure of merit in the measured temperature regime of 0.5 at 550 K.

Keywords

Thallium chalcogenide rare earth semiconductor thermoelectric figure of merit 

Supplementary material

11664_2011_1846_MOESM1_ESM.docx (17 kb)
Three tables with atomic positions of TlGdSe2, TlGdTe2, and Tl9GdTe6. (DOCX 17 kb)

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Copyright information

© TMS 2011

Authors and Affiliations

  • Cheriyedath Raj Sankar
    • 1
  • Savitree Bangarigadu-Sanasy
    • 1
  • Holger Kleinke
    • 1
  1. 1.Department of ChemistryUniversity of WaterlooWaterlooCanada

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