Effects of Ca and Mn Additions on the Microstructure and Dielectric Properties of (Bi0.5Na0.5)TiO3 Ceramics

Article

Abstract

Dielectric ceramics based on the solid solution (1 − x)Bi0.5Na0.5TiO3 (BNT)-xCaTiO3 (CT) were synthesized by the conventional solid-state route. BNT with various contents of CT formed a complete solid solution and exhibited a rhombohedral structure. CT in this solid solution with BNT was observed to decrease the dielectric constant at higher temperatures and raise the dielectric constant at lower temperatures. On the other hand, decreased ferroelectricity was observed with increasing CT concentration, resulting in a downward shift of the depolarization temperature and a decrease of the dissipation factor. With the addition of Mn2+ to 0.86BNT-0.14CT, the temperature characteristics of capacitance were improved (−55°C to 250°C, ΔC/C 25°C ≤ ±15%). By doping with 1.5 wt.% Mn2+, the dielectric constant at room temperature reached over 900, with a dielectric loss of less than 1%.

Keywords

Bismuth sodium titanate calcium titanate dielectric properties microstructure 

References

  1. 1.
    G.A. Smolenskii, V.A. Isupo, A.I. Agranovskaya, and N.N. Krainik, Sov. Phys. Solid State 2, 2651 (1961).Google Scholar
  2. 2.
    J.K. Lee, K.S. Hong, C.K. Kim, and S.E. Park, J. Appl. Phys. 91, 4538 (2002).CrossRefGoogle Scholar
  3. 3.
    T. Takenaka, K. Maruyama, and K. Sakata, Jpn. J. Appl. Phys. 30, 2236 (1991).CrossRefGoogle Scholar
  4. 4.
    J. Suchanicz, M.G. Gavshin, A.Y. Kudzin, and C.Z. Kus, J. Mater. Sci. 36, 1981 (2001).CrossRefGoogle Scholar
  5. 5.
    R. Ranjan, V. Kothai, R. Garg, A. Agrawal, A. Senyshyn, and H. Boysen, Appl. Phys. Lett. 95, 042904 (2009).CrossRefGoogle Scholar
  6. 6.
    H. Nagata, M. Yoshida, Y. Makiuchi, and T. Takenaka, Jpn. J. Appl. Phys. 42, 7401 (2003).CrossRefGoogle Scholar
  7. 7.
    Y. Hiruma, K. Yoshii, H. Nagata, and T. Takenaka, J. Appl. Phys. 103, 084121 (2008).CrossRefGoogle Scholar
  8. 8.
    D.M. Lin, K.W. Kwok, and H.L.W. Chan, Solid State Ionics 178, 1930 (2008).Google Scholar
  9. 9.
    X.X. Wang, H.L. Chan, and C.L. Choy, Solid State Commun. 125, 395 (2003).CrossRefGoogle Scholar
  10. 10.
    A. Herabut and A. Safari, J. Am. Ceram. Soc. 80, 2954 (1997).CrossRefGoogle Scholar
  11. 11.
    S. Kuharuangrong, Ceram. Intl. 33, 1403 (2007).CrossRefGoogle Scholar
  12. 12.
    A. Watcharapasorn, S. Jiansirisomboon, and T. Tunkasiri, J. Electroceram. 21, 613 (2008).CrossRefGoogle Scholar
  13. 13.
    H. Nagata and T. Takenaka, J. Eur. Ceram. Soc. 21, 1299 (2001).CrossRefGoogle Scholar
  14. 14.
    X.Y. Zhou, H.S. Gu, Y. Wang, W.Y. Li, and T.S. Zhou, Mater. Lett. 59, 1649 (2005).CrossRefGoogle Scholar
  15. 15.
    G.F. Fan, W.Z. Lu, X.H. Wang, and F. Liang, J. Mater. Sci. 42, 472 (2007).CrossRefGoogle Scholar
  16. 16.
    Y. Yuan, S.R. Zhang, X.H. Zhou, B. Tang, and B. Li, J. Electron. Mater. 38, 706 (2009).CrossRefGoogle Scholar
  17. 17.
    J.B. Lim, S. Zhang, N. Kim, and T.R. Shrout, J. Am. Ceram. Soc. 92, 679 (2009).CrossRefGoogle Scholar
  18. 18.
    Y. Yuan, C.J. Zhao, X.H. Zhou, B. Tang, and S.R. Zhang, J. Electroceram. 25, 212 (2010).CrossRefGoogle Scholar
  19. 19.
    S. Kuharuangrong and W. Schulze, J. Am. Ceram. Soc. 79, 1273 (1996).CrossRefGoogle Scholar
  20. 20.
    R.D. Shannon, Acta Crystallogr. A32, 751 (1976).Google Scholar

Copyright information

© TMS 2011

Authors and Affiliations

  1. 1.The State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengduPeople’s Republic of China

Personalised recommendations