Journal of Electronic Materials

, Volume 40, Issue 8, pp 1674–1678 | Cite as

ZnO/ZnSe/ZnTe Heterojunctions for ZnTe-Based Solar Cells

Article

Abstract

ZnO and ZnSe are proposed as n-type layers in ZnTe heterojunction diodes to overcome problems associated with the n-type doping of ZnTe. The structural properties and electrical characteristics of ZnO/ZnTe and ZnO/ZnSe/ZnTe heterojunctions grown by molecular beam epitaxy on (001) GaAs substrates are presented. ZnO shows a strong preference for c-plane (0001) orientation resulting in a nonepitaxial relationship and high density of rotational domains for growth on ZnTe (001). ZnSe/ZnTe structures demonstrate a (001) epitaxial relationship with high density of {111} stacking faults originating at the heterojunction interface. ZnO/ZnSe/ZnTe heterojunction diodes show excellent diode rectification and clear photovoltaic response with open-circuit voltage of V OC = 0.8 V.

Keywords

II–VI semiconductors diodes defects solar cells 

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Copyright information

© TMS 2011

Authors and Affiliations

  1. 1.Department of Electrical Engineering and Computer ScienceUniversity of MichiganAnn ArborUSA
  2. 2.Department of Materials Science and EngineeringUniversity of MichiganAnn ArborUSA

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