Journal of Electronic Materials

, Volume 40, Issue 6, pp 1457–1460 | Cite as

Gettered GaP Substrates for Improved Multijunction Solar Cell Devices

  • K. H. MontgomeryEmail author
  • C. R. Allen
  • I. H. Wildeson
  • J.-H. Jeon
  • A. K. Ramdas
  • J. M. Woodall


We report on the characterization of gettered p-type GaP substrates for application in high-efficiency multijunction solar cells. A commercial zinc-doped GaP substrate was divided, with one piece soaked in a phosphorus-saturated gallium-aluminum melt at 975°C. Low-temperature continuous-wave photoluminescence indicated a significant decrease in deep-level impurity peaks due to oxygen and zinc-oxygen complexes after gettering in the phosphorus-saturated gallium-aluminum melt. To illustrate what effect this has on minority-carrier diffusion lengths, Au/GaP Schottky solar cells were fabricated on the substrates, and the spectral response of each was examined. A marked increase in response across all wavelengths on the gettered sample indicates an increase in minority-carrier diffusion lengths. To ensure these results were not simply due to an increase in the depletion region width resulting from a change in carrier density, CV profiling was performed and found only a small change in carrier concentration of the gettered sample.


Gettering GaP multijunction solar cell photoluminescence spectral response capacitance–voltage 


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Copyright information

© TMS 2011

Authors and Affiliations

  • K. H. Montgomery
    • 1
    • 2
    Email author
  • C. R. Allen
    • 1
    • 2
  • I. H. Wildeson
    • 1
    • 2
  • J.-H. Jeon
    • 1
    • 2
  • A. K. Ramdas
    • 3
  • J. M. Woodall
    • 1
    • 2
  1. 1.Birck Nanotechnology CenterPurdue UniversityWest LafayetteUSA
  2. 2.School of Electrical and Computer EngineeringPurdue UniversityWest LafayetteUSA
  3. 3.Department of PhysicsPurdue UniversityWest LafayetteUSA

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