Journal of Electronic Materials

, Volume 40, Issue 5, pp 1266–1270

Bi2Te3-Sb2Te3 Superlattices Grown by Nanoalloying

  • Jan D. König
  • M. Winkler
  • S. Buller
  • W. Bensch
  • U. Schürmann
  • L. Kienle
  • H. Böttner
Article

Abstract

In this work, Bi2Te3-Sb2Te3 superlattices were prepared by the nanoalloying approach. Very thin layers of Bi, Sb, and Te were deposited on cold substrates, rebuilding the crystal structure of V2VI3 compounds. Nanoalloyed super- lattices consisting of alternating Bi2Te3 and Sb2Te3 layers were grown with a thickness of 9 nm for the individual layers. The as-grown layers were annealed under different conditions to optimize the thermoelectric parameters. The obtained layers were investigated in their as-grown and annealed states using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive x-ray (EDX) spectroscopy, transmission electron microscopy (TEM), and electrical measurements. A lower limit of the elemental layer thickness was found to have c-orientation. Pure nanoalloyed Sb2Te3 layers were p-type as expected; however, it was impossible to synthesize p-type Bi2Te3 layers. Hence the Bi2Te3-Sb2Te3 superlattices consisting of alternating n- and p-type layers showed poor thermoelectric properties.

Keywords

Thermoelectrics Bi2Te3-Sb2Te3 superlattices nanoalloying 

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Copyright information

© TMS 2011

Authors and Affiliations

  • Jan D. König
    • 1
  • M. Winkler
    • 1
  • S. Buller
    • 2
  • W. Bensch
    • 2
  • U. Schürmann
    • 3
  • L. Kienle
    • 3
  • H. Böttner
    • 1
  1. 1.Fraunhofer-Institute for Physical Measurement Techniques (IPM)FreiburgGermany
  2. 2.Institute for Inorganic ChemistryCAU KielKielGermany
  3. 3.Synthesis and Real Structure, Institute for Material ScienceCAU KielKielGermany

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