Journal of Electronic Materials

, Volume 40, Issue 6, pp 1428–1436 | Cite as

Cr-Doped III–V Nitrides: Potential Candidates for Spintronics

  • B. Amin
  • S. Arif
  • Iftikhar AhmadEmail author
  • M. Maqbool
  • R. Ahmad
  • S. Goumri-Said
  • K. Prisbrey

Studies of Cr-doped III–V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al0.75Cr0.25N, Ga0.75Cr0.25N, and In0.75Cr0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al0.75Cr0.25N and Ga0.75Cr0.25N are half-metallic dilute magnetic semiconductors while In0.75Cr0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III–V nitrides can be used in spintronics devices.


Spintronics half-metals dilute magnetic alloys Cr-doped III–V nitrides DMS DFT 


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Copyright information

© TMS 2011

Authors and Affiliations

  • B. Amin
    • 1
  • S. Arif
    • 1
  • Iftikhar Ahmad
    • 1
    Email author
  • M. Maqbool
    • 2
  • R. Ahmad
    • 3
  • S. Goumri-Said
    • 4
  • K. Prisbrey
    • 5
  1. 1.Materials Modeling Laboratory, Department of PhysicsHazara UniversityMansehraPakistan
  2. 2.Department of Physics and AstronomyBall State UniversityMuncieUSA
  3. 3.Department of ChemistryHazara UniversityMansehraPakistan
  4. 4.Physical Sciences and Engineering DivisionKing Abdullah University of Science and Technology (KAUST)ThuwalSaudi Arabia
  5. 5.Department of MetallurgyUniversity of UtahSalt Lake CityUSA

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