Journal of Electronic Materials

, Volume 39, Issue 7, pp 908–911

Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211)

  • Giacomo Badano
  • Patrice Gergaud
  • Ivan C. Robin
  • Xavier Baudry
  • Benoît Amstatt
  • Fréderique Gemain

We have used x-ray diffraction to assess the thickness dependence of strain in molecular-beam epitaxial (MBE) CdTe(211)/Ge(211). For 25-nm-thick layers, we find tensile stress of 100 MPa and in-plane strain of ~1.5 × 10−3. This stress relaxes during growth and becomes zero beyond 1 μm. We use the Dunn and Koch formula to estimate the threading dislocation density from the full-width at half-maximum of the (224) rocking curve. We then estimate the annihilation radius of MBE-grown CdTe(211)B/Ge(211) to be ~10 nm. Our layers have etch pit densities between 5 × 107 cm−2 and 5 × 106 cm−2 for a thickness of 10 μm. The lowest densities were obtained by periodic annealing epitaxy. We discuss mechanisms for the saturation of the dislocation density.


HgCdTe CdTe heteroepitaxy molecular-beam epitaxy MBE dislocations lattice relaxation annealing 


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Copyright information

© TMS 2010

Authors and Affiliations

  • Giacomo Badano
    • 1
  • Patrice Gergaud
    • 1
  • Ivan C. Robin
    • 1
  • Xavier Baudry
    • 1
  • Benoît Amstatt
    • 1
  • Fréderique Gemain
    • 1
  1. 1.Atomic Energy Commission, CEA LETI-MinatecGrenoble Cedex 9France

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