Journal of Electronic Materials

, Volume 39, Issue 6, pp 723–726 | Cite as

Defect Imaging in Laser Diodes by Mapping Their Near-Infrared Emission

  • Jens W. Tomm
  • Mathias Ziegler
  • Heiko Kissel
  • Jens Biesenbach

We report additional infrared (IR) emission bands at about 1.0 eV and 1.4 eV from GaAs-based diode lasers that have their primary emission at 808 nm (1.53 eV). Four long-wavelength bands are observed. They are assigned to bandtail-related luminescence from the quantum wells (QW) as well as to interband- and deep-level-related luminescences from the GaAs substrates. Thermal radiation is detected below 0.4 eV as well. By using a thermocamera, the defect-related emission was mapped for different types of high-power diode lasers. The mechanisms causing enhanced IR emission from the devices and potential applications of this type of monitoring are addressed.


Defects in diode lasers infrared emission defect mapping 


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This work was partly supported by the German BMBF within the Project TRUST under Grant 13N8622 and by the European Commission within the project WWW.BRIGHTER:EU, Contract No. 035266.


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Copyright information

© TMS 2010

Authors and Affiliations

  • Jens W. Tomm
    • 1
  • Mathias Ziegler
    • 1
  • Heiko Kissel
    • 2
  • Jens Biesenbach
    • 2
  1. 1.Max-Born-InstitutBerlinGermany
  2. 2.DILAS Diodenlaser GmbHMainz-HechtsheimGermany

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