Defect Imaging in Laser Diodes by Mapping Their Near-Infrared Emission
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We report additional infrared (IR) emission bands at about 1.0 eV and 1.4 eV from GaAs-based diode lasers that have their primary emission at 808 nm (1.53 eV). Four long-wavelength bands are observed. They are assigned to bandtail-related luminescence from the quantum wells (QW) as well as to interband- and deep-level-related luminescences from the GaAs substrates. Thermal radiation is detected below 0.4 eV as well. By using a thermocamera, the defect-related emission was mapped for different types of high-power diode lasers. The mechanisms causing enhanced IR emission from the devices and potential applications of this type of monitoring are addressed.
KeywordsDefects in diode lasers infrared emission defect mapping
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This work was partly supported by the German BMBF within the Project TRUST under Grant 13N8622 and by the European Commission within the project WWW.BRIGHTER:EU, Contract No. 035266.