Journal of Electronic Materials

, Volume 39, Issue 6, pp 723–726 | Cite as

Defect Imaging in Laser Diodes by Mapping Their Near-Infrared Emission

  • Jens W. Tomm
  • Mathias Ziegler
  • Heiko Kissel
  • Jens Biesenbach
Article
  • 45 Downloads

We report additional infrared (IR) emission bands at about 1.0 eV and 1.4 eV from GaAs-based diode lasers that have their primary emission at 808 nm (1.53 eV). Four long-wavelength bands are observed. They are assigned to bandtail-related luminescence from the quantum wells (QW) as well as to interband- and deep-level-related luminescences from the GaAs substrates. Thermal radiation is detected below 0.4 eV as well. By using a thermocamera, the defect-related emission was mapped for different types of high-power diode lasers. The mechanisms causing enhanced IR emission from the devices and potential applications of this type of monitoring are addressed.

Keywords

Defects in diode lasers infrared emission defect mapping 

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References

  1. 1.
    H. Imai, K. Isozumi, and M. Takusagawa, Appl. Phys. Lett. 33, 330 (1978).CrossRefADSGoogle Scholar
  2. 2.
    S.M. Abbott, Appl. Phys. Lett. 34, 766 (1979).CrossRefADSGoogle Scholar
  3. 3.
    A. Kozlowska, P. Wawrzyniak, A. Malag, M. Teodorczyk, J.W. Tomm, and F. Weik, J. Appl. Phys. 99, 053101 (2006).CrossRefADSGoogle Scholar
  4. 4.
    A. Kozlowska, P. Wawrzyniak, J.W. Tomm, F. Weik, and T. Elsaesser, Appl. Phys. Lett. 87, 153503 (2005).CrossRefADSGoogle Scholar
  5. 5.
    J. Luft and M. Behringer, Laser Technik J. 2, 57 (2005).CrossRefGoogle Scholar
  6. 6.
    M. Ziegler, R. Pomraenke, M. Felger, J.W. Tomm, P. Vasa, C. Lienau, M.B. Sanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, Appl. Phys. Lett. 93, 041101 (2008).CrossRefADSGoogle Scholar
  7. 7.
    J. LeClech, M. Ziegler, J. Mukherjee, J.W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J.G. Mclnerney, J.P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R.P. Sarzala, J. Appl. Phys. 105, 014502 (2009).CrossRefADSGoogle Scholar
  8. 8.
    J.W. Tomm, T.Q. Tien, and D.T. Cassidy, Appl. Phys. Lett. 88, 133504 (2006).CrossRefADSGoogle Scholar

Copyright information

© TMS 2010

Authors and Affiliations

  • Jens W. Tomm
    • 1
  • Mathias Ziegler
    • 1
  • Heiko Kissel
    • 2
  • Jens Biesenbach
    • 2
  1. 1.Max-Born-InstitutBerlinGermany
  2. 2.DILAS Diodenlaser GmbHMainz-HechtsheimGermany

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