Journal of Electronic Materials

, Volume 39, Issue 7, pp 936–944 | Cite as

Electronic and Optical Properties of Mg x Zn1−x O and Be x Zn1−x O Quantum Wells

  • Enrico Furno
  • Simone Chiaria
  • Michele Penna
  • Enrico Bellotti
  • Michele Goano


As a preparatory step toward establishing reliable numerical design tools for ZnO-based optoelectronic devices, we have reassessed the available information on material parameters relevant for the simulation of light-emitting diodes (LEDs) with active regions including ZnO, MgZnO, and BeZnO layers. The impact of different approximations for the electronic structure and the interface polarization charge on the optical properties of bulk ZnO and ZnO/MgZnO quantum wells has been evaluated, and a consistent set of parameters has been used not only for systematic comparison of ZnO/MgZnO and ZnO/BeZnO single quantum well structures but also for the first simulation of a realistic ZnO/BeZnO multiple quantum well LED.


ZnO MgZnO BeZnO UV LEDs quantum wells optical gain spontaneous emission spontaneous and piezoelectric polarization 


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The authors wish to thank Dr. Francesco Bertazzi (Politecnico di Torino) and Dr. Pierluigi Debernardi (CNR–IEIIT) for many useful discussions. The numerical simulations were performed with an APSYS evaluation license at Politecnico di Torino and a 1-year license at Boston University.


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Copyright information

© TMS 2010

Authors and Affiliations

  • Enrico Furno
    • 1
    • 2
  • Simone Chiaria
    • 1
  • Michele Penna
    • 1
    • 2
  • Enrico Bellotti
    • 2
  • Michele Goano
    • 1
  1. 1.Dipartimento di ElettronicaPolitecnico di TorinoTorinoItaly
  2. 2.ECE DepartmentBoston UniversityBostonUSA

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