Growth of High-Density Self-Aligned Carbon Nanotubes and Nanofibers Using Palladium Catalyst
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In this paper we demonstrate vertical self-aligned growth of carbon nanotubes (CNT) and carbon nanofibers (CNF) using 1 nm of Pd as the catalyst material. Results were compared with those obtained using traditional catalysts (Co, Fe, and Ni). Pd is of interest as it has been demonstrated to be an excellent material for electrical contact to nanotubes. CNT were grown using plasma-enhanced chemical vapor deposition (PECVD) at 450°C to 500°C and using atmospheric-pressure chemical vapor deposition (APCVD) between 450°C and 640°C. The results were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. High-density (1011 cm−2 to 1012 cm−2) self-aligned CNT growth was obtained using APCVD and Pd as the catalyst, while Co and Fe resulted in random growth. TEM revealed that the CNT grown by Pd with PECVD form large bundles of tubes, while Ni forms large-diameter CNF. It was found that the CNT grown using Pd or Ni are of low quality compared with those grown by Co and Fe.
KeywordsCarbon nanotubes carbon nanofibers chemical vapor deposition palladium catalyst Raman spectroscopy
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The authors want to thank STW for funding the project and Dr. Kenneth Teo at AIXTRON for support with the CNT growth. Furthermore, we thank Marco van der Krogt of the Kavli Institute of Nanoscience for the deposition of the metals using e-beam evaporation.
- 7.X. Tao, X. Zhang, J. Wang, J. Cheng, F. Liu, J. Luo, and Z. Luo, IEEE NEMS ‘06, 559 (2006).Google Scholar
- 9.A. Naeemi and J.D. Meindl, Carbon Nanotube Electronics (New York: Series on Integrated Circuits and Systems, Springer Science, 2009), pp. 163–190.Google Scholar
- 12.G.F. Close and H.-S.P. Wong, Int. El. Devices Meet. 2007 (2007), p. 203.Google Scholar
- 14.L. Zhu, Y. Sun, J. Xu, Z. Zhang, D.W. Hess, and C.P. Wong, P. Electr. C. 55, 44 (2005).Google Scholar
- 15.S. Vollebregt, J. Derakhshandeh, R. Ishihara, and C.I.M. Beenakker, 51st TMS Electronics Materials Conference (PA: State College, 2009).Google Scholar