Thermoelectric Properties of a 593-nm Individual Bismuth Nanowire Prepared Using a Quartz Template
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An individual bismuth nanowire sample, 593 nm in diameter and 1.64 mm in length, has been successfully grown using a quartz template. The resistivity and the Seebeck coefficient of the nanowire at 300 K were 1.35 μΩ m and −59 μV/K, respectively, similar to those of a bismuth bulk sample. The temperature dependence of the resistivity was found to decrease with temperature from 300 K to 175 K and then increase with further temperature reduction below 175 K. The absolute value of the Seebeck coefficient decreased with temperature from 300 K to 90 K, and the sign of the Seebeck coefficient changed from negative to positive near 90 K. This result indicated that there was a small amount of contamination in the bismuth. The carrier density was estimated from the resistivity and Seebeck coefficient on the basis of limitation of the mean free path and a two-carrier model, and the observed temperature dependences are discussed.
KeywordsIndividual bismuth nanowire quartz template Seebeck coefficient resistivity
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This research was supported in part by a Grant-in-Aid for the Encouragement of Young Scientists from the Japan Society for the Promotion of Science, by the Murata Science Foundation and Research for Promoting Technological Seeds of Japan Science and Technology Agency. This work was performed under the auspices of the National Institute for Fusion Science (NIFS) Collaborative Research (Grant No. NIFS08KYBI007) and NINS’s Creating Innovative Research Fields Project (Grant No. NIFS08KEIN0091).