Journal of Electronic Materials

, Volume 39, Issue 7, pp 1063–1069

Simulations of Dislocations in CdZnTe/SL/Si Substrates

Article

DOI: 10.1007/s11664-009-1039-1

Cite this article as:
Ciani, A.J. & Chung, P.W. Journal of Elec Materi (2010) 39: 1063. doi:10.1007/s11664-009-1039-1

Discrete dislocation dynamics simulations were employed to study the primary mechanisms by which superlattices (SLs) block threading dislocations (TDs) from reaching the surface of a composite CdZnTe/SL/Si substrate. We found that the difference in strain (composition) across layer boundaries played a key role as to whether a TD might veer away or continue across. We also found that, while the distance between interfaces had little effect on the motion of a single TD, it could have an impact on the dislocation tangle as a whole and should be considered carefully in SL design. We discuss our results in relation to the design of SLs for TD blocking.

Keywords

Discrete dislocation dynamics superlattice mercury cadmium telluride cadmium zinc telluride cadmium telluride HgCdTe CdZnTe CdTe silicon Si 

Copyright information

© TMS 2009

Authors and Affiliations

  1. 1.U.S. Army Research Laboratory, Aberdeen Proving GroundAberdeenUSA

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