Thermoelectric Properties of Zr3Mn4Si6 and TiMnSi2
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The Seebeck coefficient, electrical resistivity, and thermal conductivity of Zr3Mn4Si6 and TiMnSi2 were studied. The crystal lattices of these compounds contain relatively large open spaces, and, therefore, they have fairly low thermal conductivities (8.26 Wm−1 K−1 and 6.63 Wm−1 K−1, respectively) at room temperature. Their dimensionless figures of merit ZT were found to be 1.92 × 10−3 (at 1200 K) and 2.76 × 10−3 (at 900 K), respectively. The good electrical conductivities and low Seebeck coefficients might possibly be due to the fact that the distance between silicon atoms in these compounds is shorter than that in pure semiconductive silicon.
Key wordsThermal conductivity silicide Seebeck coefficient electrical resistivity layered structure
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The authors would like to express their sincere gratitude to Mr. Kenji Ohkubo, Hokkaido University, for his kind technical assistance during the measurement of thermal conductivity by the laser-flash method. This work was financially supported in part by The Core Research of Evolutional Science & Technology (CREST) program of the Japan Science and Technology Agency (JST).
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