Journal of Electronic Materials

, Volume 38, Issue 10, pp 2052–2062

On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon

  • Yann Civale
  • Guglielmo Vastola
  • Lis K. Nanver
  • Rani Mary-Joy
  • Jae-Ryoung Kim
Open Access
Article

Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of “free” Si at the Al/α-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate.

Keywords

Aluminum doping aluminum-induced crystallization layer-exchange mechanisms low-temperature doping p+n diodes silicon crystal growth silicon epitaxy solid-phase epitaxy 

Copyright information

© The Author(s) 2009

Authors and Affiliations

  • Yann Civale
    • 1
  • Guglielmo Vastola
    • 2
  • Lis K. Nanver
    • 1
  • Rani Mary-Joy
    • 1
  • Jae-Ryoung Kim
    • 3
  1. 1.Laboratory of Electronic Components, Technology and Materials, Delft Institute of Microsystems and Nanoelectronics (DIMES)Delft University of TechnologyDelftThe Netherlands
  2. 2.L-NESS and Department of Materials ScienceMilano-Bicocca UniversityMilanItaly
  3. 3.Molecular Electronics and Devices, Kavli Institute of Nanoscience DelftDelft University of TechnologyDelftThe Netherlands

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