Journal of Electronic Materials

, Volume 38, Issue 9, pp 1926–1930

Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si

  • N.G. Rudawski
  • L.R. Whidden
  • V. Craciun
  • K.S. Jones
Open Access
Article

Abstract

Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C7H7 ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 × 1015 cm−2 to 8.0 × 1015 cm−2 into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of ~5.0 ×  1014 cm−2. Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free growth for C doses of 0.5 × 1015 cm−2 to 1.0 × 1015 cm−2. At higher doses, growth was defective and eventually polycrystalline due to induced in-plane tensile stress from substitutional C incorporation.

Keywords

Cluster-ion implantation Si amorphization strain stress  solid-phase epitaxial growth 

Copyright information

© TMS 2009

Authors and Affiliations

  • N.G. Rudawski
    • 1
  • L.R. Whidden
    • 1
  • V. Craciun
    • 1
  • K.S. Jones
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of FloridaGainesvilleUSA

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