Journal of Electronic Materials

, Volume 38, Issue 6, pp 756–760

Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures

  • Hisashi Masui
  • Samantha C. Cruz
  • Shuji Nakamura
  • Steven P. DenBaars
Open Access
Article

Inclined crystallographic planes of the wurtzite structure were investigated in comparison with the zincblende structure in terms of surface geometry characteristics. The ball–stick model indicates that the semipolar \( \left( {1{\bar 1} 01} \right) \) surface possesses a surface polarity resembling the anion polarity, which agrees with the common experimental observations of epitaxial growth preference for the cation-polarity \( \left( {1{\bar 1} 0{\bar 1} } \right) \) surface over the \( \left( {1{\bar 1} 01} \right) \) surface. The wurtzite \( \left\{ {11{\bar 2} 2} \right\} \) surface was found to share geometrical similarities with the zincblende {100} surface uniquely among the possible semipolar planes. This finding encourages epitaxial growth on the \( \left\{ {11{\bar 2} 2} \right\} \) plane of wurtzite semiconductors, e.g., GaN, with the potential of avoiding atomic step formations typically associated with off-axis crystallographic planes.

Keywords

Wurtzite zincblende semipolar orientation surface polarity 

Copyright information

© The Author(s) 2009

Authors and Affiliations

  • Hisashi Masui
    • 1
  • Samantha C. Cruz
    • 1
  • Shuji Nakamura
    • 1
  • Steven P. DenBaars
    • 1
  1. 1.Solid State Lighting and Energy Center, Materials Department, College of EngineeringUniversity of CaliforniaSanta BarbaraUSA

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