Journal of Electronic Materials

, Volume 38, Issue 7, pp 1189–1193 | Cite as

Molecular Dynamics Simulation on Mechanics of Skutterudite CoSb3 Nanowire

  • Xuqiu Yang
  • Pengcheng Zhai
  • An Zhou
  • Lisheng Liu
  • Qingjie Zhang
Article

For the binary thermoelectric material CoSb3 with a complex crystal structure, the Morse potential functional form is employed to describe its three-dimensional atomic interactions. The mechanical responses and deformation behavior of a rectangular cross-section CoSb3 nanowire subjected to uniaxial tensile strain are simulated at constant temperature by the molecular dynamics method. The deformation is strain controlled with constant strain rate. When the strain increases, necking gradually becomes distinct near the middle of the model, and complete damage occurs at around 60% strain. The single-crystal CoSb3 nanowire exhibits properties distinct from those of single-crystal CoSb3 bulk previously studied. Comparison of the stress–strain curves and configuration evolutions of the CoSb3 nanowire and bulk during tensile loading indicate that an interesting brittle–ductile transition phenomenon occurs when the single-crystal CoSb3 varies from bulk to nanowire. Future efforts should be devoted to seeking the critical dimension at which this transition happens and the mechanism behind it.

Keywords

Thermoelectric material mechanical properties molecular dynamics nanowire CoSb3 

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References

  1. 1.
    B.C. Sales, D. Mandrus, B.C. Chakoumakos, V. Keppens, J.R. Thompson. Phys. Rev. B 56, 15081 (1997) doi: 10.1103/PhysRevB.56.15081.CrossRefADSGoogle Scholar
  2. 2.
    B.C. Chakoumakos, B.C. Sales, D. Mandrus, V. Keppens. Acta Crystallogr. B 55, 341 (1999) doi: 10.1107/S0108768198018345.PubMedCrossRefGoogle Scholar
  3. 3.
    L.D. Chen, T. Kawahara, X.F. Tang, T. Goto, T. Hirai, J.S. Dyck, W. Chen, and C. Uher, J. Appl. Phys. 90, 1864 (2001) doi: 10.1063/1.1388162.CrossRefADSGoogle Scholar
  4. 4.
    A. Kjekshus, T. Rakke. Acta Chem. Scand. A 28, 99 (1974) doi: 10.3891/acta.chem.scand.28a-0099.CrossRefGoogle Scholar
  5. 5.
    D.T. Morelli, T. Caillat, J.P. Fleurial, A. Borshchevsky, J. Vandersande, B. Chen, and C. Uher, Phys. Rev. B 51, 9622 (1995) doi: 10.1103/PhysRevB.51.9622.CrossRefADSGoogle Scholar
  6. 6.
    T. Calliat, A. Borshchevsky, J.P. Fleurial. J. Appl. Phys. 80, 4442 (1996) doi: 10.1063/1.363405.CrossRefADSGoogle Scholar
  7. 7.
    J.W. Sharp, E.C. Jones, R.K. Williams, P.M. Martin, B.C. Sales. J. Appl. Phys. 78, 1013 (1995) doi: 10.1063/1.360402.CrossRefADSGoogle Scholar
  8. 8.
    J.O. Sofo, G.D. Mahan. Phys. Rev. B 58, 15620 (1998) doi: 10.1103/PhysRevB.58.15620.CrossRefADSGoogle Scholar
  9. 9.
    J.L. Feldman, D.J. Singh, I.I. Mazin, D. Mandrus, B.C. Sales. Phys. Rev. B 61, 9209 (2000) doi: 10.1103/PhysRevB.61.R9209.CrossRefADSGoogle Scholar
  10. 10.
    L. Chaput, P. Pécheur, J. Tobola, H. Scherrer. Phys. Rev. B 72, 085126 (2005) doi: 10.1103/PhysRevB.72.085126.CrossRefADSGoogle Scholar
  11. 11.
    G. Binnig, H. Rohrer, Helev. Phys. Acta. 55, 726 (1982).Google Scholar
  12. 12.
    G. Binnig, C. F. Quate, Phys. Rev. Lett. 56, 930(1986) doi: 10.1103/PhysRevLett.56.930.PubMedCrossRefADSGoogle Scholar
  13. 13.
    F. Ercolessi, Spring College in Computational Physics, ICTP, Trieste, June (1997).Google Scholar
  14. 14.
    Nicholas Metropolis and Stanislaw Ulam, J. Am. Stat. Assoc. 44, 335 (1949) doi: 10.2307/2280232.MATHPubMedCrossRefMathSciNetGoogle Scholar
  15. 15.
    J. Schiøtz, F. D. Di Tolla, K. W. Jacobsen, Nature 391, 561 (1998) doi: 10.1038/35328.CrossRefADSGoogle Scholar
  16. 16.
    H. Mehrez, S. Ciraci. Phys. Rev. B 56, 12632 (1997) doi: 10.1103/PhysRevB.56.12632.CrossRefADSGoogle Scholar
  17. 17.
    P. Walsh, W. Li, R.K. Kalia, A. Nakano, P. Vashista, S. Saini. Appl. Phys. Lett. 78, 3328 (2001) doi: 10.1103/PhysRevB.69.115411.CrossRefADSGoogle Scholar
  18. 18.
    J.W. Kang, H.J. Hwang. Nanotechnology 12, 295 (2001) doi: 10.1088/0957-4484/12/3/317.CrossRefADSGoogle Scholar
  19. 19.
    E. Z. da Silva, D. Frederico, Novaes, Antônio J. R. da Silva, A. Fazzio. Phys. Rev. B 69, 115411 (2004).CrossRefADSGoogle Scholar
  20. 20.
    E.Z. da Silva, A.J.R. da Silva, A. Fazzio. Phys. Rev. Lett. 87, 256102 (2001) doi: 10.1103/PhysRevLett.87.256102.PubMedCrossRefADSGoogle Scholar
  21. 21.
    Steve Plimpton, Comput. Mater. Sci. 4, 361(1995) doi: 10.1016/0927-0256(95)00037-1.CrossRefGoogle Scholar
  22. 22.
    X. Yang, L. Liu, P. Zhai, Q. Zhang, Comput. Mater. Sci. 44, 1390 (2009) doi: 10.1016/j.commatsci.2008.09.007.CrossRefGoogle Scholar
  23. 23.
    H. Rafii-Tabar. Phys. Rep. 325, 239 (2000) doi: 10.1016/S0370-1573(99)00087-3.CrossRefADSGoogle Scholar
  24. 24.
    W.C. Swope, H.C. Andersen, P.H. Berens, K.R. Wilson. J. Chem. Phys. 76, 637 (1982) doi: 10.1063/1.442716.CrossRefADSGoogle Scholar
  25. 25.
    H.J.C. Berendsen, J.P.M. Postma, W.F. van Gunsteren, A. Dinola, J.R. Haak. J. Chem. Phys. 81, 3684 (1984) doi: 10.1063/1.448118.CrossRefADSGoogle Scholar
  26. 26.
    Shengping Shen and S. N. Atluri, Comput. Model. Eng. Sci. 6, 91 (2004) doi: 10.1109/MCSE.2004.58.MATHCrossRefGoogle Scholar

Copyright information

© TMS 2009

Authors and Affiliations

  • Xuqiu Yang
    • 1
  • Pengcheng Zhai
    • 1
    • 2
  • An Zhou
    • 1
  • Lisheng Liu
    • 1
    • 2
  • Qingjie Zhang
    • 2
  1. 1.Department of Engineering Structure and MechanicsWuhan University of TechnologyWuhanChina
  2. 2.State Key Laboratory of Advanced Technology for Materials Synthesis and ProcessingWuhan University of TechnologyWuhanChina

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