Journal of Electronic Materials

, Volume 37, Issue 12, pp 1799–1805

Comparison of MBE Growth of InSb on Si (001) and GaAs (001)

  • T. Lien Tran
  • Fariba Hatami
  • W. Ted Masselink
  • Vas P. Kunets
  • G.J. Salamo
Open Access
Article

We describe the epitaxial growth of InSb films on both Si (001) and GaAs (100) substrates using molecular-beam epitaxy and discuss the structural and electrical properties of the resulting films. The complete 2 μm InSb films on GaAs (001) were grown at temperatures between 340°C and 420°C and with an Sb/In flux ratio of approximately 5 and a growth rate of 0.2 nm/s. The films were characterized in terms of background electron concentration, mobility, and x-ray rocking curve width. Our best results were for a growth temperature of 350°C, resulting in room-temperature mobility of 41,000 cm2/V s.  For the growth of InSb on Si, vicinal Si(001) substrates offcut by 4° toward (110) were used. We investigated growth temperatures between 340°C and 430°C for growth on Si(001). In contrast to growth on GaAs, the best results were achieved at the high end of the range of TS =  C, resulting in a mobility of 26,100 cm2/V s for a 2 μm film. We also studied the growth and properties of InSb:Mn films on GaAs with Mn content below 1%. Our results showed the presence of ferromagnetic ordering in the samples, opening a new direction in the diluted magnetic semiconductors.

Key words

InSb GaAs Si substrates electron mobility x-ray diffraction (In,Mn)Sb diluted magnetic semiconductor 

Copyright information

© TMS 2008

Authors and Affiliations

  • T. Lien Tran
    • 1
  • Fariba Hatami
    • 1
  • W. Ted Masselink
    • 1
  • Vas P. Kunets
    • 2
  • G.J. Salamo
    • 2
  1. 1.Department of PhysicsHumboldt-Universität zu BerlinBerlinGermany.
  2. 2.Department of PhysicsUniversity of ArkansasFayettevilleUSA

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