Journal of Electronic Materials

, Volume 37, Issue 10, pp 1511–1523

Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions

Open Access

This review paper presents important findings relative to the use of compliant substrates for mismatched heteroepitaxial devices, including the theoretical background, experimental results, and the directions for current efforts. Theories for relative compliance and absolute compliance are presented. Key experimental results are summarized for a number of compliant substrate technologies, including cantilevered membranes, silicon-on-insulator, twist bonding, and glass bonding. Two approaches of current interest, layer transfer and universal compliant trench (UCT) substrates, are presented as potential solutions to the problem of limited absolute compliance in planar compliant substrates attached to handle wafers.


Compliant substrates heteroepitaxy silicon-on-insulator twist bonded wafer bonding universal compliant trench substrates critical layer thickness 

Copyright information

© TMS 2008

Authors and Affiliations

  1. 1.Electrical and Computer Engineering DepartmentUniversity of ConnecticutStorrsUSA

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