Journal of Electronic Materials

, Volume 37, Issue 8, pp 1158–1162

Evaluation of Mn Uniformity in CdMnTe Crystal Grown by the Vertical Bridgman Method

  • Jijun Zhang
  • Wanqi Jie
  • Lijun Luan
  • Tao Wang
  • Dongmei Zeng
Article
  • 106 Downloads

Abstract

Cd1−xMnxTe is a typical diluted magnetic semiconductor, as well as substrate for the epitaxial growth of Hg1−xCdxTe. In this paper, the homogeneity of a Cd1−xMnxTe (x = 0.2) single-crystal ingot grown by the vertical Bridgman method was studied. The crystal structure and quality of the as-grown ingot were evaluated. Near-infrared (NIR) transmission spectroscopy was adopted to develop a simple optical determination of the Mn concentration in the as-grown ingot. A correlation equation between cut-off wavelength λco from NIR transmission spectra and Mn concentration by inductively coupled plasma atomic emission spectrometry (ICP-AES) was established. Using this equation, we investigated the Mn concentration distribution in both the axial and radial directions of the ingot. It was found that the segregation coefficient of Mn in the axial direction of the ingot was 0.95, which is close to unity. The Mn concentration variation in the wafers from the middle part of the ingot was 0.001 mole fraction. All these results proved that homogeneous Cd0.8Mn0.2Te crystals can be grown from the vertical Bridgman method.

Keywords

Cd1xMnxTe Mn concentration segregation coefficient near-infrared transmission spectroscopy 

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References

  1. 1.
    J.K. Furdyna, J. Appl. Phys. 64, R29 (1988) 10.1063/1.341700 CrossRefGoogle Scholar
  2. 2.
    R. Triboulet, A. Heurtel, J. Rioux, J. Cryst. Growth 101, 131 (1990) 10.1016/0022-0248(90)90951-G CrossRefGoogle Scholar
  3. 3.
    A. Burger, K. Chattopadhyay, H. Chen, J.O. Ndap, X.Y. Ma, S. Trivedi, S.W. Kutcher, R.J. Chen, R.D. Rosemeier, J. Cryst. Growth. 198/199, 872 (1999) 10.1016/S0022-0248(98)01171-3 CrossRefGoogle Scholar
  4. 4.
    A. Mycielski, A. Burger, M. Sowinska, M. Groza, A. Szadkowski, P. Wojnar, B. Witkowska, W. Kaliszek, P. Siffert, Phys. Stat. Sol. (c) 2, 1578 (2005). 10.1002/pssc.200460838 CrossRefGoogle Scholar
  5. 5.
    Y.R. Lee, A.K. Ramdas, Solid State Commun. 51, 861 (1984) 10.1016/0038-1098(84)91088-3 CrossRefGoogle Scholar
  6. 6.
    D.J. Olego, J.P. Faurie, S. Sivananthan, P.M. Raccah, Appl. Phys. Lett. 47, 1172 (1985) 10.1063/1.96316 CrossRefGoogle Scholar
  7. 7.
    S.B. Trivedi, S.W. Kutcher, C.C. Wang, G.V. Jagannathan, U. Hömmerich, A. Bluiett, M. Turner, J.T. Seo, K.L. Schepler, B. Schumm, P.R. Boyd, G. Green, J. Electron. Mater. 30, 728 (2001) 10.1007/BF02665863 CrossRefGoogle Scholar
  8. 8.
    P. Becla, D. Kaiser, J. Appl. Phys. 62, 1352 (1987) 10.1063/1.339638 CrossRefGoogle Scholar
  9. 9.
    D. Heiman, P. Becla, R. Kershaw, R. Kershaw, D. Ridgley, K. Dwight, A. Wold, R.R. Galazka, Phys. Rev. B 34, 3961 (1988) 10.1103/PhysRevB.34.3961 CrossRefGoogle Scholar
  10. 10.
    A.A. Wronkowska, A. Wronkowski, A. Bukaluk, M. Stefański, H. Arwin, F. Firszt, S. Łȩgowski, H. Mȩczyńska, K. Hradil, Appl. Surf. Sci. 212–213, 110 (2003). 10.1016/S0169-4332(03)00033-3 CrossRefGoogle Scholar
  11. 11.
    C.D. Maxey, J.E. Gower, P. Capper, E.S. O’Keefe, T. Skauli, C.K. Ard, J. Cryst. Growth 197, 427 (1999) 10.1016/S0022-0248(98)00741-6 CrossRefGoogle Scholar
  12. 12.
    W.F.H. Micklethwaite, J. Appl. Phys. 63, 2382 (1988) 10.1063/1.341056 CrossRefGoogle Scholar
  13. 13.
    K. Nakagawa, K. Maeda, S. Takeuchi, Appl. Phys. Lett. 34, 574 (1979) 10.1063/1.90871 CrossRefGoogle Scholar
  14. 14.
    W. Pfann, Zone Melting, 2 edn. (New York: Wiley, 1966)Google Scholar
  15. 15.
    T.S. Lee, S.B. Lee, J.M. Kim, J.S. Kim, S.H. Suh, J.H. Song, I.H. Park, S.U. Kim, M.J. Park, J. Electron. Mater. 24, 1057 (1995) 10.1007/BF02653053 CrossRefGoogle Scholar
  16. 16.
    M. Azoulay, A. Raizman, G. Gafni, M. Roth, J. Cryst. Growth 101, 256 (1990) 10.1016/0022-0248(90)90977-S CrossRefGoogle Scholar

Copyright information

© TMS 2008

Authors and Affiliations

  • Jijun Zhang
    • 1
  • Wanqi Jie
    • 1
  • Lijun Luan
    • 1
  • Tao Wang
    • 1
  • Dongmei Zeng
    • 1
  1. 1.School of Materials Science and EngineeringNorthwestern Polytechnical UniversityXi’anChina

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